T. Kusunoki

发表

Direct observation of defects in Si-doped and Ge-doped Ga0.9Al0.1As epitaxial layers by transmission electron microscopy

O. Ueda, T. Kotani, K. Akita, 1977 .

Long-wavelength strained quantum-well lasers oscillating up to 210/spl deg/C on InGaAs ternary substrates

H. Ishikawa, K. Otsubo, T. Kusunoki, 1998, IEEE Photonics Technology Letters.

High-power, wide-bandwidth, 1.55 μm-wavelength GaInAsP/InP distributed feedback laser

Hiroshi Ishikawa, Toshihiro Kusunoki, Hisao Sudo, 1987 .

Reduction of dislocations in InGaAs layer on GaAs using epitaxial lateral overgrowth

C. Takenaka, K. Nakajima, T. Tanahashi, 1991 .

LEC growth of InGaAs bulk crystal fed with a GaAs source

Toshihiro Kusunoki, Kazuo Nakajima, C. Takenaka, 1991 .

Bridgman growth of compositionally graded InxGa1 − xAs (x = 0.05−0.30) single crystals for use as seeds for In0.25Ga0.75As crystal growth

K. Nakajima, K. Otsubo, T. Kusunoki, 1997 .

Constant temperature LEC growth of InGaAs ternary bulk crystals using the double crucible method

K. Nakajima, T. Kusunoki, 1996 .

Growth of ternary InxGa1−xAs bulk crystals with a uniform composition through supply of GaAs

C. Takenaka, K. Nakajima, T. Kusunoki, 1991 .

Growth of ternary In0.14Ga0.86As bulk crystal with uniform composition at constant temperature through GaAs supply

Toshihiro Kusunoki, Kazuo Nakajima, C. Takenaka, 1991 .

Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals

K. Fujiwara, K. Nakajima, N. Usami, 2002 .

Growth of Uniform InGaAs Bulk Crystal by Multi-Component Zone Melting Method

K. Nakajima, H. Shoji, Takashi Suzuki, 1995 .

InGaAs/InGaAsP strained SQW LD grown on In/sub 0.05/Ga/sub 0.95/As ternary substrate

M. Matsuda, H. Shoji, S. Yamazaki, 1994, Proceedings of IEEE 14th International Semiconductor Laser Conference.

Fabrication of In/sub 0.25/Ga/sub 0.75/As/InGaAsP strained SQW lasers on In/sub 0.05/Ga/sub 0.95/As ternary substrate

H. Ishikawa, M. Matsuda, H. Shoji, 1994, IEEE Photonics Technology Letters.

Growth and properties of InGaAs ternary bulk crystals

H. Ishikawa, K. Nakajima, T. Kusunoki, 1993, 1993 (5th) International Conference on Indium Phosphide and Related Materials.

Constant Temperature LEC Growth of Uniform Composition InGaAs Bulk Crystals through Continuous Supply of GaAs

K. Nakajima, T. Kusunoki, K. Kuramata, 1992 .

Phase Diagram of the In‐Ga‐As‐P Quaternary System and LPE Growth Conditions for Lattice Matching on InP Substrates

K. Nakajima, T. Kotani, K. Akita, 1978 .

Room‐temperature cw operation of InGaAsP/InGaP lasers at 727 nm grown on GaAs substrates by liquid phase epitaxy

K. Wakao, H. Nishi, S. Isozumi, 1984 .

Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams

K. Fujiwara, K. Nakajima, N. Usami, 2005 .

Solute transport mechanism during liquid phase epitaxial (LPE) growth with an applied current

C. Takenaka, K. Nakajima, T. Kusunoki, 1991 .

The preparation and properties of In-Ga-As-P batch prepared melts (batch melts)

K. Akita, Y. Nishitani, T. Kusunoki, 1982 .

High‐efficiency InGaAsP/InP flat‐surface buried heterostructure distributed feedback lasers at 1.55 μm

S. Yamakoshi, Y. Kotaki, H. Ishikawa, 1987 .

Low-threshold InGaAsP/InGaP lasers at 810 nm grown on GaAs substrate by LPE

K. Wakao, H. Nishi, I. Ushijima, 1984 .

Tem Observation of defects in InGaAsP and InGaP Crystals on GaAs Substrates Grown by Liquid Phase Epitaxy

I. Umebu, O. Ueda, S. Isozumi, 1983 .

Observation of etch pits produced in InP by new etchants

S. Komiya, T. Kotani, K. Akita, 1979 .

High-temperature (210/spl deg/C) operation of long-wavelength strained quantum well lasers on InGaAs ternary substrates

K. Otsubo, H. Shoji, T. Kusunoki, 1998, Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178).

Long-Wavelength Strained Quantum-Well Lasers Oscillating up to 210 Co n

H. Ishikawa, K. Otsubo, H. Shoji, 1998 .

High T0 (140 K) and low-threshold long-wavelength strained quantum well lasers on InGaAs ternary substrates

H. Ishikawa, K. Otsubo, H. Shoji, 1997 .

In0.38Ga0.62As/InAlGaAs/InGaP Strained Double Quantum Well Lasers on In0.21Ga0.79As Ternary Substrate

Hiroshi Ishikawa, Toshihiro Kusunoki, Hajime Shoji, 1996 .

Multicomponent zone melting growth of ternary InGaAs bulk crystal

K. Nakajima, T. Suzuki, T. Kusunoki, 1995, Seventh International Conference on Indium Phosphide and Related Materials.

In_ Ga_ AS/InAlGaAs/InGaP Strained Double Quantum Well Lasers on In_ Ga_ As Ternary Substrate

H. Ishikawa, K. Otsubo, H. Shoji, 1996 .

EXPERIMENTAL STUDY ON WOOD-CONCRETE COMPOSITE BEAMS AS SIMPLE BEAM

T. Kusunoki, H. Isoda, Masahiro Inayama, 2014 .

Effects of zinc doping in DFB lasers emitting at 1.3 and 1.55 mu m

H. Ishikawa, H. Soda, H. Sudo, 1990 .

14 GHz single‐mode picosecond optical pulse train generation in Zn‐doped distributed‐feedback lasers

Hiroshi Ishikawa, Toshihiro Kusunoki, Hisao Sudo, 1989 .

The effect of growth temperature and impurity doping on composition of LPE InGaAsP on InP

S. Komiya, K. Akita, Y. Nishitani, 1982 .