A. Lefebvre

发表

The photoplastic effect in GaAs, a model for device degradation phenomena

D. Vignaud, J. Farvacque, É. Dépraetere, 1990 .

Intrinsic Strain at Slightly Mismatched InGaAs/InP Interfaces as Studied by Transmission Electron Microscopy

A. Lefebvre, Y. Androussi, 1992 .

Multiplication of misfit dislocations in InxGa1−xAs/GaAs heterostructures

A. Lefebvre, C. Ulhaq-Bouillet, 1994 .

On the formation of edge dislocations in InxGa1-xAs/GaAs heterostructures with x<0.20

A. Lefebvre, C. Ulhaq-Bouillet, 1993 .

Misfit dislocations in In0.15Ga0.85As/GaAs strained‐layer superlattices

J. Persio, C. Herbeaux, A. Lefebvre, 1989 .

LACBED measurement of the chemical composition of a thin In(x)Ga(1-x)As layer buried in a GaAs matrix.

D. Jacob, A. Lefebvre, Y. Androussi, 2001, Ultramicroscopy.

Elastic misfit stress relaxation in highly strained InGaAs/GaAs structures

J. Massies, N. Grandjean, J. Aimé, 1994 .

A new type of misfit dislocation multiplication process in InxGa1−xAs/GaAs strained-layer superlattices

J. Persio, C. Bouillet, C. Herbeaux, 1991 .

Stress relaxation in highly strained InAs/GaAs structures as studied by finite element analysis and transmission electron microscopy

A. Lefebvre, Y. Androussi, T. Benabbas, 1996 .

Elastic Misfit Strain Relaxation in Highly Strained InAs Dots on GaAs as Studied by Tem, AFM and VFF Atomistic Calculations

M. Lannoo, G. Allan, C. Priester, 1994 .

INTERACTIONS OF MISFIT DISLOCATIONS IN INXGA1-XAS/GAAS INTERFACES

J. Persio, C. Herbeaux, A. Lefebvre, 1991 .

Lattice defects in three structurally related minerals: Kyanite, yoderite and staurolite

A. Lefebvre, 1982 .

Dissociation of c dislocations in sillimanite Al2SiO5

J. Paquet, A. Lefebvre, 1983 .

Stacking faults and twins in kyanite, Al2SiO5

A. Lefebvre, D. Menard, 1981 .

Periodic antiphase boundary spinel-based structures in aluminates, gallates, aluminium oxynitrides and transition aluminas

D. Jacob, A. Lefebvre, Y. Androussi, 2005 .

Transmission electron microscopy of andalusite single crystals indented at room temperature

A. Lefebvre, 1982 .

Slip and twinning in high-stress-deformed GaAs and the influence of doping

G. Vanderschaeve, A. Lefebvre, Y. Androussi, 1989 .

The origin of microtwinning in room temperature indented undoped and n‐doped GaAs crystals

G. Vanderschaeve, A. Lefebvre, 1988 .

Single stacking faults in high-stress deformed semi-insulating GaAs

G. Vanderschaeve, A. Lefebvre, Y. Androussi, 1987 .

Transmission electron microscopy of semi-insulating Ga As deformed at room temperature and under confining pressure

J. Persio, A. Lefebvre, P. François, 1985 .

Dislocation introduction in the initial stages of MBE growth of highly strained structures

J. Laval, A. Dubon, A. Lefebvre, 1996 .

High resolution electron microscope analysis of lattice distortions and In segregation in highly strained In0.35Ga0.65As coherent islands grown on GaAs (001)

S. Kret, J. Laval, A. Dubon, 1999 .

PLASTIC STRESS RELAXATION IN HIGHLY STRAINED IN0.30GA0.70AS/GAAS STRUCTURES

J. Massies, C. Deparis, A. Dubon, 1995 .

Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy

Jean-Michel Chauveau, Yvon Cordier, J. Chauveau, 2003 .

A finite-element study of strain fields in vertically aligned InAs islands in GaAs

T. Benabbas, Y. Androussi, A. Lefebvre, 1999 .

Composition analysis of semiconductor quantum wells by energy filtered convergent-beam electron diffraction.

J. Zuo, Y. Cordier, D. Jacob, 2008, Ultramicroscopy.

Transmission electron microscopy and cathodoluminescence of tensile‐strained GaxIn1−xP/InP heterostructures. I. Spatial variations of the tensile stress relaxation

R. Masut, J. Bonard, J. Ganiére, 1996 .

A transmission electron microscopy study of composition in Si1− x Ge x /Si (001) quantum dots

S. Kret, V. Ferreiro, A. Lefebvre, 2007 .

Interpretation of unexpected rocking curve asymmetry in LACBED patterns of semiconductors.

D. Jacob, A. Lefebvre, 2003, Ultramicroscopy.

Surface relaxation of strained semiconductor heterostructures revealed by finite-element calculations and transmission electron microscopy

D. Jacob, A. Lefebvre, Y. Androussi, 1998 .

A TEM investigation of the dislocation rosettes around vickers indentation in GaAs

G. Vanderschaeve, A. Lefebvre, Y. Androussi, 1987 .

On the determination of the nature of misfit dislocations in semiconductor strained-layer heterostructures

J. Persio, C. Herbeaux, A. Lefebvre, 1989 .

Structure à antiphases périodiques de l'oxynitrure d'aluminium δ1 non‐stoechiométrique de composition 9Al2O3–AlN

A. Lefebvre, 1975 .

Characterisation of implanted surface layers in ion-thinned semiconductors by transmission electron microscopy

D. Jacob, A. Lefebvre, 2003 .

Moiré-like fringes in transmission electron microscopy images of coherently strained semiconductor islands.

A. Lefebvre, Y Androussi, T Benabbas, 2002, Ultramicroscopy.