Makoto Nakase

发表

Effect of base additive on process latitude in chemically amplified electron-beam resists

Tetsuro Nakasugi, Satoshi Saito, Naoko Kihara, 1997, Advanced Lithography.

Quantum chemical studies of chemically amplified resist materials for electron-beam and ArF excimer laser

Koji Asakawa, Satoshi Saito, Naoko Kihara, 1994, Advanced Lithography.

Phase-contrast lithography

Soichi Inoue, Tadahito Fujisawa, Satoshi Tanaka, 1993, Advanced Lithography.

Chemically amplified ArF resists based on cleavable alicyclic group and the absorption band shift method

Koji Asakawa, Naomi Shida, Makoto Nakase, 1998, Advanced Lithography.

Effect of basic additives on sensitivity and diffusion of acid in chemical amplification resists

Koji Asakawa, Makoto Nakase, Tohru Ushirogouchi, 1995, Advanced Lithography.

Chemically ampilified ArF excimer laser resists using the absorption band shift method

Koji Asakawa, Naomi Shida, Takuya Naito, 1995, Advanced Lithography.

Effect of substituent groups of phenol-derivative dissolution inhibitors on inhibition efficiency

Koji Asakawa, Naoko Kihara, Takuya Naito, 1996, Advanced Lithography.

Mechanism of amine additive in chemically amplified resist visualized by using Monte Carlo simulation

Koji Asakawa, Makoto Nakase, Tohru Ushirogouchi, 1995, Advanced Lithography.

Effect of remaining solvent on sensitivity, diffusion of acid, and resolution in chemical amplification resists

Koji Asakawa, Makoto Nakase, Tohru Ushirogouchi, 1995 .

EB Resist Materials Consist of Catechol Derivatives

Satoshi Saito, Makoto Nakase, Naoko Kihara, 1998 .

Highly Transparent Chemically Amplified ArF Excimer Laser Resists by Absorption Band Shift for 193 nm Wavelength

Koji Asakawa, Naomi Shida, Takuya Naito, 1994 .

Simulation Study on Phase-Shifting Masks for Isolated Patterns

Soichi Inoue, Yoko Tanaka, Shuichi Tamamushi, 1991 .

Effect of Coherence Factor σ and Shifter Arrangement for the Levenson-Type Phase-Shifting Mask

Soichi Inoue, Kohji Hashimoto, Kenji Kawano, 1992 .

Optimization of partially coherent optical system for optical lithography

Soichi Inoue, Tadahito Fujisawa, Makoto Nakase, 1992 .

NOVEL ArF EXCIMER LASER RESISTS BASED ON MENTHYL METHACRYLATE TERPOLYMER

Naomi Shida, Makoto Nakase, Tohru Ushirogouchi, 1996 .

Relationship between remaining solvent and diffusion of acid in chemical amplification resists.

Koji Asakawa, Makoto Nakase, Tohru Ushirogouchi, 1994 .

Molecular Design of Acid Generators for EB and ArF Excimer Laser Exposure Using Molecular Orbital Calculations.

Koji Asakawa, Satoshi Saito, Takuya Naito, 1994 .

Effect of acid evaporation in chemically amplified resists on insoluble layer formation.

Satoshi Saito, Makoto Nakase, Naoko Kihara, 1995 .