Pin Ho

Very low-noise Al0.3Ga0.7As/In0.35Ga0.65As/GaAs single quantum-well pseudomorphic HEMTs

P. M. Smith, J. M. Ballingall, N. Lewis, 1990 .

A normal‐incidence type‐II quantum‐well infrared photodetector using an indirect AlAs/Al0.5Ga0.5As system grown on (110) GaAs for mid‐ and long‐wavelength multicolor detection

Sheng S. Li, Y. H. Wang, M. O. Manasreh, 1993 .

Ultralow dark current p‐type strained‐layer InGaAs/InAlAs quantum well infrared photodetector with background limited performance for T≤100 K

Sheng S. Li, J. Chu, Y. H. Wang, 1994 .

A new compressively strained‐layer p‐type InGaAs/AlGaAs/GaAs step bound to miniband quantum well infrared photodetector with a detection peak at 10.4 μm

Sheng S. Li, J. Chu, P. Ho, 1996 .

60 GHz power performance of 0.1 /spl mu/m gate-length InAlAs/InGaAs HEMTs

P. C. Chao, P. M. Smith, K. C. Hwang, 1994, Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).