Y.-C. Yeo

Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devices

D.S.H. Chan, N. Balasubramanian, A.D. Trigg, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

Spatial distribution of interface trap density in strained channel transistors using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements

Kah-Wee Ang, Kin Mun Wong, Wai Kin Chim, 2007 .

Improved electrical and reliability Characteristics of HfN--HfO/sub 2/-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first Process

D.S.H. Chan, J.F. Kang, R.Q. Han, 2005, IEEE Electron Device Letters.

Frequency dependent dynamic charge trapping in HfO/sub 2/ and threshold voltage instability in MOSFETs

D.S.H. Chan, X.P. Wang, D.L. Kwong, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

A new robust non-local algorithm for band-to-band tunneling simulation and its application to Tunnel-FET

G. S. Samudra, Y. Yeo, E. Toh, 2009, 2009 International Symposium on VLSI Technology, Systems, and Applications.