B. Lai

Fabrication and characterization of metal-oxide-semiconductor field-effect transistors and gated diodes using Ta/sub 2/O/sub 5/ gate oxide

J.Y. Lee, Jing-Chi Yu, B. Lai, 2000, IEEE Electron Device Letters.

A study on the capacitance-voltage characteristics of metal-Ta2O5-silicon capacitors for very large scale integration metal-oxide-semiconductor gate oxide applications

J. Lee, Joseph Ya-min Lee, B. Lai, 1999 .

Leakage Current Mechanism of Metal-Ta 2 O 5 -Metal Capacitors for Memory Device Applications

J. Lee, B. Lai, 1999 .

The electrical properties of high-dielectric-constant and ferroelectric thin films for very large scale integration circuits

J. Lee, B. Lai, 2002 .

Amorphous InGaZnO Thin-Film Transistors Compatible With Roll-to-Roll Fabrication at Room Temperature

Tuo-Hung Hou, Yung-Hui Yeh, Yi-Jen Chan, 2012, IEEE Electron Device Letters.

The Effect of Single Crystalline Substrates and Ion-Beam Bombardment on Exchange Bias in Nanocrystalline ${\hbox{NiO}}/{\hbox{Ni}}_{80}{\hbox{Fe}}_{20}$ Bilayers

F. Klose, D. Cortie, J. van Lierop, 2014, IEEE Transactions on Magnetics.

Title The Effect of Single Crystalline Substrates and Ion-Beam Bombardment on Exchange Bias in Nanocrystalline NiO / Ni 80 Fe 20 Bilayers

F. Klose, D. Cortie, P. Pong, 2013 .

Ta/sub 2/O/sub 5//silicon barrier height measured from MOSFETs fabricated with Ta/sub 2/O/sub 5/ gate dielectric

Jingshu Yu, B. Lai, J. Y. Lee, 2001 .