Akinobu Teramoto

Akinobu Teramoto, M. Katsumata, M. Sekine, 1998, ICMTS 1998. Proceedings of 1998 International Conference on Microelectronic Test Structures (Cat. No.98CH36157).

Impact of Channel Direction Dependent Low Field Hole Mobility on (100) Orientation Silicon Surface

Tadahiro Ohmi, Rihito Kuroda, Shigetoshi Sugawa, 2011 .

Atomically Flattening Technology at 850ºC for Si(100) Surface

Tadahiro Ohmi, Rihito Kuroda, Shigetoshi Sugawa, 2019, ECS Transactions.

New era of silicon technologies due to radical reaction based semiconductor manufacturing

Tadahiro Ohmi, Akinobu Teramoto, Masaki Hirayama, 2006 .

High performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs

Tadahiro Ohmi, Rihito Kuroda, Akinobu Teramoto, 2007 .

Formation and Property of Yttrium and Yttrium Silicide Films as Low Schottcky Barrier material for n-Type Silicon

Tadahiro Ohmi, Shigetoshi Sugawa, Tetsuya Goto, 2008 .

Very Low Bit Error Rate in Flash Memory using Tunnel Dielectrics formed by Kr/O2/NO Plasma Oxynitridation

Tadahiro Ohmi, Shigetoshi Sugawa, Yuki Kumagai, 2006 .

A Test Circuit for Extremely Low Gate Leakage Current Measurement of 10 aA for 80 000 MOSFETs in 80 s

Tadahiro Ohmi, Rihito Kuroda, Shigetoshi Sugawa, 2013 .

Effect of drain current on appearance probability and amplitude of random telegraph noise in low-noise CMOS image sensors

Rihito Kuroda, Shigetoshi Sugawa, Shunichi Wakashima, 2018 .

Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantage

Tadahiro Ohmi, Rihito Kuroda, Shigetoshi Sugawa, 2007 .

Large-Scale Test Circuits for High-Speed and Highly Accurate Evaluation of Variability and Noise in Metal–Oxide–Semiconductor Field-Effect Transistor Electrical Characteristics

Tadahiro Ohmi, Naoto Miyamoto, Rihito Kuroda, 2011 .

A novel analysis of oxide breakdown based on dynamic observation using ultra-high speed video capturing up to 10,000,000 frames per second

Rihito Kuroda, Yasuhisa Tochigi, Shigetoshi Sugawa, 2014, 2014 IEEE International Reliability Physics Symposium.

1/f CHANNEL NOISE AT HIGH DRAIN CURRENT IN MOS TRANSISTORS

Tadahiro Ohmi, Akinobu Teramoto, T. Ohmi, 2011 .

MFIS-structure Memory Device with High Quality Ferroelectric Sr2(Ta1-x Nbx)2O7 Formed by Physical Vapor Deposition and Oxygen Radical Treatment by Radical Oxygen Assisted Layer by Layer(ROALL) deposition

Tadahiro Ohmi, Shigetoshi Sugawa, Tetsuya Goto, 2004 .

Relation Between the Mobility, $\hbox{1}/f$ Noise, and Channel Direction in MOSFETs Fabricated on (100) and (110) Silicon-Oriented Wafers

Tadahiro Ohmi, Akinobu Teramoto, Weitao Cheng, 2010, IEEE Transactions on Electron Devices.

Extraction of Time Constants Ratio over Nine Orders of Magnitude for Understanding Random Telegraph Noise in MOSFETs

Tadahiro Ohmi, Rihito Kuroda, S. Sugawa, 2013 .

Analysis of Source Follower Random Telegraph Signal Using nMOS and pMOS Array TEG

Tadahiro Ohmi, Naoto Miyamoto, Rihito Kuroda, 2007 .

Anomalous Random Telegraph Signal Extractions from a Very Large Number of n-Metal Oxide Semiconductor Field-Effect Transistors Using Test Element Groups with 0.47 Hz–3.0 MHz Sampling Frequency

Tadahiro Ohmi, Shigetoshi Sugawa, Akinobu Teramoto, 2009 .

Asymmetry of RTS characteristics along source-drain direction and statistical analysis of process-induced RTS

Tadahiro Ohmi, Shigetoshi Sugawa, Yuki Kumagai, 2009, 2009 IEEE International Reliability Physics Symposium.

Analyzing correlation between multiple traps in RTN characteristics

Tadahiro Ohmi, Rihito Kuroda, Akihiro Yonezawa, 2014, 2014 IEEE International Reliability Physics Symposium.

Impact of Improved High-Performance Si(110)-Oriented Metal–Oxide–Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully Depleted Silicon-on-Insulator Devices

Tadahiro Ohmi, Shigetoshi Sugawa, Akinobu Teramoto, 2006 .

GEOMETRY AND BIAS DEPENDENCE OF LOW-FREQUENCY RANDOM TELEGRAPH SIGNAL AND 1/f NOISE LEVELS IN MOSFETS

Tadahiro Ohmi, Shigetoshi Sugawa, L.K.J. Vandamme, 2005 .

Stress-induced leakage current and random telegraph signal

Tadahiro Ohmi, Naoto Miyamoto, Shigetoshi Sugawa, 2009 .