L. Law

Demonstration of TaOx-based ring contact Resistive Random Access Memory device

E. Chua, C. C. Tan, Yu Jiang, 2015, 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).

Guest‐Cage Atomic Interactions in a Clathrate‐Based Phase‐Change Material

D. Loke, J. Skelton, T. Lee, 2014, Advanced materials.

TiWOx interfacial layer for current reduction and cyclability enhancement of phase change memory

Luping P. Shi, R. Zhao, K. Lim, 2012 .

Correlation between optical absorption redshift and carrier density in phase change materials

R. Ji, K. Bai, C. Ng, 2013 .

Enabling Universal Memory by Overcoming the Contradictory Speed and Stability Nature of Phase-Change Materials

Weijie Wang, Andrea L. Lacaita, Luping Shi, 2012, Scientific Reports.

Resistive switching in a GaOx-NiOx p-n heterojunction

K. Teo, X. W. Sun, R. Zhao, 2012 .

Self-compliance SET switching and multilevel TaOx resistive memory by current-sweep operation

M. H. Li, Y. Jiang, V. Y.-Q Zhuo, 2014, 2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS).

Guest‐Cage Atomic Interactions in a Clathrate‐Based Phase‐Change Material

D. Loke, J. Skelton, Ming-hua Li, 2014, Advances in Materials.

Correlation between optical absorption redshift and carrier density in phase change materials

R. Ji, K. Bai, C. Ng, 2013 .