M. Lamprecht

Determination of donor and DX center capture characteristics by pulsed photoluminescence

K. Thonke, M. Lamprecht, 2018 .

Very slow decay of a defect related emission band at 2.4 eV in AlN: Signatures of the Si related shallow DX state

C. Grund, K. Thonke, Z. Sitar, 2016 .

Model for the deep defect‐related emission bands between 1.4 and 2.4 eV in AlN

K. Thonke, Z. Sitar, R. Collazo, 2017 .

Extremely Slow Decay of Yellow Luminescence in Be‐Doped GaN and Its Identification

M. Boćkowski, K. Thonke, H. Teisseyre, 2018, physica status solidi (b).

Slow decay of a defect‐related emission band at 2.05 eV in AlN: Signatures of oxygen‐related DX states

K. Thonke, Z. Sitar, R. Collazo, 2017 .

Optical signatures of silicon and oxygen related DX centers in AlN

K. Thonke, Z. Sitar, R. Collazo, 2017 .