V. Armbrister

发表

Strain-induced improvement of photoluminescence from the groups of laterally ordered SiGe quantum dots

Zh. V. Smagina, A. Dvurechenskii, A. Zinovieva, 2017 .

SiGe quantum rings on the Si(100) surface

A. Dvurechenskii, V. Volodin, V. Zinovyev, 2012 .

Photoconductive gain and quantum efficiency of remotely doped Ge/Si quantum dot photodetectors

A. Dvurechenskii, A. Bloshkin, V. Armbrister, 2016 .

Suppression of hole relaxation in small Ge/Si quantum dots

A. Dvurechenskii, A. Bloshkin, V. Armbrister, 2015 .

Phonon bottleneck in p-type Ge/Si quantum dots

A. Dvurechenskii, A. Bloshkin, V. Armbrister, 2015 .

Selective oxidation of poly-Si with embedded Ge nanocrystals in Si/SiO2/Ge(NCs)/poly-Si structure for memory device fabrication

A. Dvurechenskii, V. Armbrister, A. Nenashev, 2009 .

Strain-dependent intersubband absorption in the valence band of SiGe quantum wells

A. Bloshkin, V. Armbrister, A. Yakimov, 2014 .

Effect of deposition conditions on the thermal stability of Ge layers on SiO2 and their dewetting behavior

V. Armbrister, A. Shklyaev, C. Dabard, 2020 .

Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate

A. Dvurechenskii, V. Armbrister, V. Kirienko, 2013, Nanoscale Research Letters.

Resonant photoluminescence of Si layers grown on SiO2

A. Dvurechenskii, K. Zhuravlev, A. Latyshev, 2013 .

Surface morphology of Si layers grown on SiO2

A. Kozhukhov, D. Gulyaev, V. Armbrister, 2013 .

Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO2 for non-volatile memory device

Zh. V. Smagina, A. Dvurechenskii, A. Gutakovskii, 2008 .

Pulsed ion-beam induced nucleation and growth of Ge nanocrystals on SiO2

Zh. V. Smagina, A. Dvurechenskii, A. Gutakovskii, 2007 .

Pulsed Low-energy Ion-beam Induced Nucleation and Growth of Ge Nanocrystals on SiO 2

Zh. V. Smagina, A. Dvurechenskii, A. Gutakovskii, 2007 .

Ge/Si Nanostructures with Quantum Dots Grown by Ion-Beam-Assisted Heteroepitaxy

V. A. Zinoviev, J. V. Smagina, A. Dvurechenskii, 2010 .

Self-assembly of germanium islands under pulsed irradiation by a low-energy ion beam during heteroepitaxy of Ge/Si(100) structures

J. V. Smagina, A. Dvurechenskii, A. Nenashev, 2008 .

Ge/Si quantum dot nanostructures grown with low-energy ion beam-assisted epitaxy

J. V. Smagina, A. Dvurechenskii, A. Gutakovskii, 2005 .

Elemental composition of nanoclusters formed by pulsed irradiation with low-energy ions during Ge/Si epitaxy

Zh. V. Smagina, A. Dvurechenskii, V. Volodin, 2004 .

Formation of ordered groups of quantum dots during Ge/Si heteroepitaxy

A. Dvurechenskii, A. Mudryi, V. Zinov’ev, 2013 .

Formation of ordered groups of quantum dots during Ge/Si heteroepitaxy

A. Dvurechenskii, A. Mudryi, V. Zinov’ev, 2013, Optoelectronics, Instrumentation and Data Processing.

Nucleation and growth of ordered groups of SiGe quantum dots

A. Dvurechenskii, A. Mudryi, V. Zinovyev, 2015 .

Surface plasmon dispersion in a mid-infrared Ge/Si quantum dot photodetector coupled with a perforated gold metasurface

A. Dvurechenskii, A. Bloshkin, V. Armbrister, 2018 .

Localization of electrons in dome-shaped GeSi/Si islands

A. Dvurechenskii, A. Bloshkin, P. Kuchinskaya, 2015 .

Electronic states in vertically ordered Ge/Si quantum dots detected by photocurrent spectroscopy

A. Dvurechenskii, A. Bloshkin, V. Armbrister, 2014 .

Nucleation and epitaxial growth of Ge nanoislands on Si surface prepatterned by ion irradiation

Zh. V. Smagina, A. Dvurechenskii, V. Seleznev, 2013 .

Molecular-beam epitaxial growth of Ge/Si nanostructures under low-energy ion irradiation

Zh. V. Smagina, A. Dvurechenskii, P. Novikov, 2011 .

Strain-induced formation of fourfold symmetric SiGe quantum dot molecules.

A. Dvurechenskii, V. Zinovyev, P. Kuchinskaya, 2013, Physical review letters.

Hydrogen passivation of self-assembled Ge/Si quantum dots

A. Dvurechenskii, V. Armbrister, A. Yakimov, 2014 .

Surface morphology transitions induced by ion beam action during Ge/Si MBE

A. K. Gutakovskii, A. V. Dvurechenskii, V. A. Armbrister, 2004, International Conference on Micro- and Nano-Electronics.

Photovoltaic Ge/SiGe quantum dot mid-infrared photodetector enhanced by surface plasmons.

J. Hartmann, A. Dvurechenskii, J-M Hartmann, 2017, Optics express.

Plasmon polariton enhanced mid-infrared photodetectors based on Ge quantum dots in Si

A. V. Dvurechenskii, V. V. Kirienko, V. A. Armbrister, 2017 .

Selective enhancement of the hole photocurrent by surface plasmon–polaritons in layers of Ge/Si quantum dots

A. Dvurechenskii, V. Armbrister, A. Yakimov, 2017 .

Enhancement of the hole photocurrent in layers of Ge/Si quantum dots with abrupt heterointerfaces

A. Dvurechenskii, V. Armbrister, A. Yakimov, 2016 .

Stress-induced nanoislands nucleation during growth of Ge/Si heterostructures under low-energy ion irradiation

V. A. Zinoviev, J. V. Smagina, A. Dvurechenskii, 2009 .

SiGe quantum rings on the Si(100) surface

A. Dvurechenskii, A. Nenashev, V. Volodin, 2012, Russian microelectronics.