V. Timofeev

发表

Photoluminescence enhancement in double Ge/Si quantum dot structures

A. Dvurechenskii, A. Zinovieva, A. Mudryi, 2016 .

Initial stage growth of Ge x Si 1x layers and Ge quantum dot formation on Ge x Si 1x surface

A. K. Gutakovsky, O. Pchelyakov, A. Nikiforov, 2012 .

Initial stage growth of GexSi1−x layers and Ge quantum dot formation on GexSi1−x surface by MBE

A. K. Gutakovsky, O. Pchelyakov, V. Timofeev, 2012, Nanoscale Research Letters.

Electron localization in Ge/Si heterostructures with double quantum dots detected by an electron spin resonance method

A. Nenashev, A. Dvurechenskii, A. Zinovieva, 2013 .

Morphology, Structure, and Optical Properties of SnO (x) Films

I. Korolkov, A. Nikiforov, T. Gavrilova, 2020, Russian Physics Journal.

Sn – Induced decomposition of SiGeSn alloys grown on Si by molecular-beam epitaxy

A. Gutakovskii, V. Timofeev, V. Mashanov, 2017 .

Growth of Epitaxial SiSn Films with High Sn Content for IR Converters

A. Nikiforov, A. Kokhanenko, A. Kokhanenko, 2017 .

Valence-band offsets in strained SiGeSn/Si layers with different tin contents

V. Murashov, A. Nikiforov, A. Bloshkin, 2017 .

Bidirectional photocurrent of holes in layers of Ge/Si quantum dots

A. Dvurechenskii, V. Timofeev, A. Yakimov, 2014 .

On the process of hole trapping in Ge/Si heterostructures with Ge quantum dots

A. Yakimov, A. Dvurechenskii, A. Bloshkin, 2014 .

Molecular Beam Epitaxy of Strained Nanoheterostructures Based on Si, Ge, and Sn

O. Pchelyakov, A. Nikiforov, M. Y. Esin, 2020 .

Elastically stressed pseudomorphic SiSn island array formation with a pedestal on the Si(1 0 0) substrate using Sn as a growth catalyst

A. Nikiforov, T. Gavrilova, D. Gulyaev, 2019, Journal of Crystal Growth.

Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy

V. V. Ulyanov, I. Yu, O. Pchelyakov, 2011, Nanoscale research letters.

Tuning the structural and optical properties of GeSiSn/Si multiple quantum wells and GeSn nanostructures using annealing and a faceted surface as a substrate

A. Nikiforov, O. Komkov, A. Bloshkin, 2022, Applied Surface Science.

Splitting of frequencies of optical phonons in tensile-strained germanium layers

V. Volodin, A. Nikiforov, V. Timofeev, 2017 .

Initial growth stages of Si–Ge–Sn ternary alloys grown on Si (100) by low-temperature molecular-beam epitaxy

A. Nikiforov, V. Timofeev, A. Tuktamyshev, 2015 .

Epitaxial growth of peculiar GeSn and SiSn nanostructures using a Sn island array as a seed

A. Nikiforov, O. Komkov, T. Gavrilova, 2021, Applied Surface Science.

Morphology, Structure, and Optical Properties of SnO (x) Films

I. Korolkov, A. Nikiforov, T. Gavrilova, 2020, Russian Physics Journal.

Effect of annealing temperature on the morphology, structure, and optical properties of nanostructured SnO(x) films

I. Korolkov, A. Nikiforov, T. Gavrilova, 2020, Materials Research Express.

Structural and Optical Properties of a Hybrid Material Based on Tin Oxides and Multilayer Periodic Structures with Pseudomorphic GeSiSn Layers

O. Komkov, I. Loshkarev, D. Gulyaev, 2021, Russian Physics Journal.

Remarkable enhancement of photoluminescence and photoresponse due to photonic crystal structures based on GeSiSn/Si multiple quantum wells

A. Nikiforov, O. Komkov, V. Timofeev, 2023, Materials Today Physics.

Studying the morphology, structure and band diagram of thin GeSiSn films and their mid-infrared photoresponse

A. Nikiforov, V. Novikov, I. Loshkarev, 2018, Semiconductor Science and Technology.

Influence of delta-doping on the performance of Ge/Si quantum-dot mid-infrared photodetectors

A. Dvurechenskii, A. Nikiforov, V. Timofeev, 2012 .

Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

A. Nikiforov, A. Gutakovskii, I. Loshkarev, 2018, Nanotechnology.

Reflection high energy electron diffraction studies on SixSnyGe1 − x − y on Si(100) molecular beam epitaxial growth

O. Pchelyakov, A. Nikiforov, V. Timofeev, 2014 .

Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands

O. Pchelyakov, A. Nikiforov, M. Y. Esin, 2018 .

Influence of the Preliminary Annealing Conditions on Step Motion at the Homoepitaxy on the Si(100) Surface

A. Nikiforov, V. Timofeev, A. Deryabin, 2020, 2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM).

Effect of a Stepped Si(100) Surface on the Nucleation Process of Ge Islands

O. Pchelyakov, A. Nikiforov, I. Loshkarev, 2018 .

Photovoltaic Ge/Si quantum dot detectors operating in the mid-wave atmospheric window (3 to 5 μm)

A. Dvurechenskii, A. Bloshkin, V. Timofeev, 2012, Nanoscale Research Letters.

Strained multilayer structures with pseudomorphic GeSiSn layers

A. Nikiforov, A. Gutakovskii, V. Timofeev, 2016 .

Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si(100)

A. Nikiforov, A. Gutakovskii, V. Timofeev, 2017 .

Vibrational and Light-Emitting Properties of Si/Si1−xSnx Heterostructures

V. Volodin, A. Nikiforov, H. Rinnert, 2019, JETP Letters.

Influence of delta-doping on the hole capture probability in Ge/Si quantum dot mid-infrared photodetectors

A. Dvurechenskii, A. Bloshkin, V. Timofeev, 2014, Nanoscale Research Letters.

Effect of overgrowth temperature on the mid-infrared response of Ge/Si(001) quantum dots

A. Yakimov, A. Dvurechenskii, A. Nikiforov, 2012 .

Inelastic electron scattering cross-section spectroscopy of GexSi1 − x nanoheterostructures

A. S. Parshin, O. Pchelyakov, A. Nikiforov, 2014 .

Inelastic Electron Scattering CrossSection Spectroscopy of Ge x Si 1- x Nanoheterostructures

A. S. Parshin, O. Pchelyakov, A. Nikiforov, 2014 .

On the fine structure of spectra of the inelastic-electron-scattering cross section and the Si surface parameter

A. S. Parshin, O. Pchelyakov, A. Nikiforov, 2015 .

Ge and GexSi1 − x islands formation on GexSi1 − x solid solution surface

A. K. Gutakovsky, O. Pchelyakov, A. Nikiforov, 2012 .

Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures

A. Nikiforov, I. Loshkarev, V. Timofeev, 2017 .

Sn influence on MBE growth of GeSiSn/Si MQW

A. Nikiforov, A. Gutakovskii, V. Timofeev, 2017 .

Infrared absorption and admittance spectroscopy of Ge quantum dots on a strained SiGe layer

A. Yakimov, A. Dvurechenskii, A. Nikiforov, 2011 .

Midinfrared photoresponse of Ge quantum dots on a strained Si0.65Ge0.35 layer

A. V. Dvurechenskii, V. V. Kirienko, A. I. Nikiforov, 2011 .

Antibonding ground state of holes in double vertically coupled Ge/Si quantum dots

A. Yakimov, A. Dvurechenskii, A. Nikiforov, 2012 .

Structural and Optical Properties of a Hybrid Material Based on Tin Oxides and Multilayer Periodic Structures with Pseudomorphic GeSiSn Layers

O. Komkov, I. Loshkarev, D. Gulyaev, 2021, Russian Physics Journal.