I. Neizvestny

D. V. Brunev, N. Shwartz, I. Neizvestny, 2001, 2001 Siberian Russian Student Workshop on Electron Devices and Materials. Proceedings 2nd Annual (IEEE Cat. No.01EX469).

Quantum key distribution in single-photon communication system

D. B. Tretyakov, V. Entin, I. Ryabtsev, 2016 .

Role of Readsorption in the Formation of Vertical AIIIBV Nanowires with Self-Catalytic Growth

A. Nastovjak, N. Shwartz, I. Neizvestny, 2020 .

Examination of Self-Catalyzed III–V Nanowire Growth by Monte Carlo Simulation

A. Nastovjak, N. Shwartz, I. Neizvestny, 2019 .

Element base of quantum informatics II: Quantum communications with single photons

D. B. Tretyakov, V. Entin, I. Ryabtsev, 2017, Russian Microelectronics.

Quantum cryptography

V. Kurochkin, I. Neizvestny, 2009, 2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices.

3D-model of epitaxial growth on porous {111} and {100} Si surfaces

N. Shwartz, I. Neizvestny, Z. Yanovitskaya, 2002 .

Pore Sealing on Si(001) and Si(111) in Homoepitaxy and Annealing: A Monte Carlo Simulation

A. V. Chemakin, A. V. Zverev, I. Neizvestny, 2004 .

Kinetic Monte Carlo simulation of thin film morphology evolution during growth

D. V. Brunev, A. V. Zverev, N. Shwartz, 2003, 2003 Siberian Russian Workshop on Electron Devices and Materials. Proceedings. 4th Annual (IEEE Cat. No.03EX664).

The effects of monovacancies on the terrace width during sublimation from the (111) surface of a diamond-like crystal

A. V. Zverev, I. Neizvestny, N. L. Shvartz, 2003 .

Monte Carlo simulation of steps behavior on Si(111) surface during sublimation

A. V. Zverev, N. Shwartz, I. Neizvestny, 2000 .

Specific temperature-related features of photoconductivity relaxation in PbSnTe:In films under interband excitation

A. N. Akimov, I. Neizvestny, V. Shumsky, 2016 .

Mechanical and electrical properties of the double-layer film system GeO2–Si3N4 on Ge

E. B. Gorokhov, I. Neizvestny, I. G. Kosulina, 1987 .

Element base of quantum informatics I. Qubits of a quantum computer based on single atoms in optical traps

D. B. Tretyakov, E. A. Yakshina, V. Entin, 2017, Russian Microelectronics.

Terahertz detectors based on Pb1−xSnxTe:In films

A. N. Akimov, I. Neizvestny, N. S. Pashchin, 2013 .

Monte Carlo Simulation of Gold Drop Formation and Movement over a Silicon Substrate

N. Shwartz, I. Neizvestny, A. Spirina, 2022, 2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials (EDM).

Element base of quantum informatics I. Qubits of a quantum computer based on single atoms in optical traps

D. B. Tretyakov, E. A. Yakshina, V. Entin, 2017 .

Experimental quantum information with single atoms and photons

D. B. Tretyakov, V. Entin, I. Ryabtsev, 2013, Herald of the Russian Academy of Sciences.

Formation of silicon nanocrystals in Si—SiO2—α-Si—SiO2 heterostructures during high-temperature annealing: Experiment and simulation

V. Volodin, S. Cherkova, I. Neizvestny, 2016, Optoelectronics Instrumentation and Data Processing.

Schwoebel barriers and quantum dot lateral size equalization during epitaxial growth

D. V. Brunev, N. Shwartz, I. Neizvestny, 2001 .

Comparative Characteristics of GaAs and InAs Langmuir Evaporation - Monte Carlo Simulation

N. Shwartz, I. Neizvestny, A. Spirina, 2018, Defect and Diffusion Forum.

Abruptness of axial Si-Ge heterojunctions in nanowires

A. Nastovjak, N. Shwartz, I. Neizvestny, 2010, 2010 11th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices.

Edge-dimer row – The reason of three-bilayer steps and islands stability on Si(1 1 1)-7 × 7

A. V. Zverev, K. Romanyuk, N. Shwartz, 2006 .

Monte Carlo Simulation of Semiconductor Nanostructure Growth

N. Shwartz, I. Neizvestny, 2017 .

KINETICS OF ATOMIC SURFACE TRANSFORMATION DURING STRANSKI–KRASTANOW GROWTH MODE

D. V. Brunev, N. Shwartz, I. Neizvestny, 2004 .

Monte Carlo simulation of the formation of AIIIBV nanostructures with the use of droplet epitaxy

A. Nastovjak, I. Neizvestny, M. Vasilenko, 2016, Optoelectronics, Instrumentation and Data Processing.

Monte Carlo simulation of the formation of AIIIBV nanostructures with the use of droplet epitaxy

A. Nastovjak, N. Shwartz, I. Neizvestny, 2016 .

Far infrared magneto-photoconductivity investigation of superlattices

I. Neizvestny, V. Shumsky, O. Vasin, 1991 .

Concentric GaAs nanorings formation by droplet epitaxy — Monte Carlo simulation

A. Nastovjak, N. Shwartz, I. Neizvestny, 2018 .

Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime

S. P. Suprun, A. S. Tarasov, O. Tereshchenko, 2020 .

Experimental quantum cryptography with single photons

D. B. Tretyakov, V. Entin, I. Ryabtsev, 2017 .

Quantum key distribution in single-photon communication system

D. B. Tretyakov, V. Entin, I. Ryabtsev, 2016, Optoelectronics, Instrumentation and Data Processing.

Investigation the bit rate of quantum key using Si single photon detectors

V. Kurochkin, I. Neizvestny, A. V. Kolyako, 2014 .

Germanium MIS structures

A. Rzhanov, I. Neizvestny, 1979 .

Germanium-based metal-insulator-semiconductor transistors as a direction for the further development of CMOS technology

I. Neizvestny, 2016, Optoelectronics, Instrumentation and Data Processing.

Germanium-based metal-insulator-semiconductor transistors as a direction for the further development of CMOS technology

I. Neizvestny, 2016 .

Simulation of surface relief effect on ALD process

N. Shwartz, I. Neizvestny, A. Zverev, 2006 .

Two-Dimensional Epitaxial Nucleation with Large Critical-Nucleus Size

I. Neizvestny, Z. Yanovitskaya, N. L. Shvarts, 2002 .

Terahertz detectors based on Pb1−xSnxTe:In films

A. N. Akimov, I. Neizvestny, N. S. Pashchin, 2013, Optoelectronics Instrumentation and Data Processing.

Terahertz imaging system components based on PbSnTe: In films

V. V. Kubarev, E. N. Chesnokov, I. Igumenov, 2009 .

Semiconductor nanowire sensors

I. Neizvestny, 2009, 2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies.

Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties

S. P. Suprun, A. S. Tarasov, O. Tereshchenko, 2020 .

Possibilities of Monte Carlo simulation for examination of nanowhisker growth

A. Nastovjak, N. Shwartz, I. Neizvestny, 2010 .

Peculiarities of axial and radial Ge–Si heterojunction formation in nanowires: Monte Carlo simulation

A. Nastovjak, N. Shwartz, I. Neizvestny, 2012 .

Raman studies of phase and atomic compositions of GeSi nanosystems after pulsed annealing

J. Stuchlík, A. Dvurechenskii, V. Volodin, 2016, Optoelectronics, Instrumentation and Data Processing.

Element base of quantum informatics II: Quantum communications with single photons

V. Entin, I. Ryabtsev, A. Latyshev, 2017 .

Monte Carlo Simulation of Ga Droplet Movement during the GaAs Langmuir Evaporation

A. Nastovjak, N. Shwartz, I. Neizvestny, 2018, Semiconductors.

Quantum cryptography

I. Neizvestny, Vladimir L. Kurochkin, Vladimir L. Kurochkin, 2009, 2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices.