F. Qin

发表

Influence of Ar/H2 ratio on the characteristics of boron-doped nc-Si:H films prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Xueyu Zhang, A. Wu, Shaofei Shi, 2013 .

GaN Films deposited on ITO coated glass

H. Wang, J. Zhao, Yue Zhao, 2015 .

Growth of high c-orientated crystalline GaN films on amorphous Cu/glass substrates with low-temperature ECR-PEMOCVD

Yuemei Liu, J. Bian, Dong Zhang, 2014, Journal of Materials Science: Materials in Electronics.

Effects of surface properties on barrier height and barrier inhomogeneities of platinum contacts to n-type 4H-SiC

Lingqi Huang, Dejun Wang, F. Qin, 2013 .

Effect of buffer layer on the structural and morphological properties of GaN films grown with ECR-PEMOCVD

J. Bian, Xin Jiang, Dong Zhang, 2012 .

ZnO films on transferable and low thermal resistance graphite substrate grown by ultrasonic spray pyrolysis

J. Bian, Yingmin Luo, Jingchang Sun, 2014, Journal of Wuhan University of Technology-Mater. Sci. Ed..

Carrier transport mechanisms of n-ZnO/ZnMgO/p-GaN heterojunctions revealed by temperature-dependent current–voltage characteristics

J. Bian, Yingmin Luo, Jingchang Sun, 2013 .

High-quality ZnO nanorods grown on graphite substrates by chemical solution method

J. Bian, Yingmin Luo, Jingchang Sun, 2013 .

Ultra-low threshold optically pumped random laser emission behavior of highly oriented pyrolytic graphite

J. Bian, Yingmin Luo, Yuzhi Zhang, 2014 .

Impact of the Deposition Temperature on the Structural and Electrical Properties of InN Films Grown on Self-Standing Diamond Substrates by Low-Temperature ECR-MOCVD

Dong Zhang, F. Qin, Shuaijie Wang, 2020, Coatings.

Improvement of SiO2/4H-SiC interface properties by electron cyclotron resonance microwave nitrogen-hydrogen mixed plasma post-oxidation annealing

Dejun Wang, F. Qin, Wenbo Li, 2013 .

Deposition and properties of highly C-oriented GaN films on diamond substrates

F. Jia, J. Bian, Dong Zhang, 2011 .

Influence of N2 flux on the improvement of highly c-oriented GaN films on diamond substrates

J. Bian, Dong Zhang, F. Qin, 2011 .

Effects of Low Temperature Electronic Cyclotron Resonance Hydrogen Plasma Treatment and Annealing on the Electrical Properties of Ti and Ni Contacts to 4H-SiC

Lingqi Huang, M. Gao, Dejun Wang, 2012 .

Interfacial traps and mobile ions induced flatband voltage instability in 4H-SiC MOS capacitors under bias temperature stress

Dejun Wang, F. Qin, Chao Yang, 2019, Journal of Physics D: Applied Physics.

Deposition of GaN Films on Freestanding CVD Thick Diamond Films

J. Bian, Dong Zhang, F. Qin, 2010 .

Fabrication and its characteristics of low-temperature polycrystalline silicon thin films

C. Dong, Xin Jiang, A. Wu, 2009 .

Highly c-axis oriented GaN films grown on free-standing diamond substrates for high-power devices

J. Bian, Dong Zhang, G. Du, 2011 .

Influence of Nitridation Time on the Characteristics of GaN Films Deposited on Ni Metal Substrate by ECR-MOCVD

J. Bian, F. Qin, M. Zhong, 2014 .

Effect of temperature on GaN films deposited on graphite substrates at low-temperature

Guoqiang Lin, J. Bian, Dong Zhang, 2013 .

Effect of deposition pressure on mechanical properties of Al–Mg–B thin films

J. Zhao, F. Qin, Y. Zhao, 2014 .

Low-temperature ECR-PEMOCVD deposition of high-quality crystalline gallium nitride films: A comparative study of intermediate layers for growth on amorphous glass substrates

J. Bian, Dong Zhang, F. Qin, 2014 .

Low-temperature growth of high c-orientated crystalline GaN films on amorphous Ni/glass substrates with ECR-PEMOCVD

Yang Liu, J. Bian, Dong Zhang, 2014 .

Low temperature synthesis of GaN films on ITO substrates by ECR-PEMOCVD

Zhao Yan, J. Bian, Y. Zhao, 2013 .

ZnO-based graphite-insulator-semiconductor diode for transferable and low thermal resistance high-power devices

J. Bian, Yingmin Luo, Jingchang Sun, 2012 .

Realization of nitride–oxide based p–n heterojunctions with the n-VO2/p-GaN/sapphire structure

Xiaoxuan Li, J. Bian, Yingmin Luo, 2016 .

Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-plasma-enhanced MOCVD

J. Bian, Dong Zhang, F. Qin, 2012, Rare Metals.

Structural, morphological, photoluminescence and photocatalytic properties of Gd-doped ZnO films

F. Yuan, F. Qin, Ning Wang, 2017 .

Synthesis of SiO2/β-SiC/graphite hybrid composite by low temperature hot filament chemical vapor deposition

J. Bian, Yanhong Liu, Dong Zhang, 2013 .

Synergistic passivation effects of nitrogen plasma and oxygen plasma on improving the interface quality and bias temperature instability of 4H-SiC MOS capacitors

Yan Su, Dejun Wang, F. Qin, 2020 .

Interface properties and bias temperature instability with ternary H–Cl–N mixed plasma post-oxidation annealing in 4H–SiC MOS capacitors

Yan Su, Dejun Wang, F. Qin, 2019, Applied Surface Science.

Passivation of SiO2/4H–SiC interface defects via electron cyclotron resonance hydrogen–nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing

Dejun Wang, F. Qin, Bingbing Liu, 2016 .

Plasma passivation of near-interface oxide traps and voltage stability in SiC MOS capacitors

Yunong Sun, Dejun Wang, F. Qin, 2019, Journal of Applied Physics.

Cleaning of SiC surfaces by low temperature ECR microwave hydrogen plasma

Lingqi Huang, M. Gao, Dejun Wang, 2011 .

Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfO x -based RRAM devices

Dejun Wang, F. Qin, J. Bai, 2023, Nanotechnology.

Microstructure and cathodoluminescence study of GaN nanowires without/with P‐doping

Lizhao Liu, T. Hu, Baodan Liu, 2012 .

The Structural and Electronic Properties of Carbon-related Point Defects on 4H-SiC (0001) Surface

Dejun Wang, F. Qin, Yan Su, 2022, Applied Surface Science.

The Initial Oxidation of the 4h-Sic (0001) Surface with C-Related Point Defects：Insight by First-Principles Calculations

Dejun Wang, F. Qin, J. Bai, 2022, SSRN Electronic Journal.

Reliability and Stability Improvement of MOS Capacitors via Nitrogen-Hydrogen Mixed Plasma Pretreatment for SiC Surfaces.

Yan Su, Dejun Wang, F. Qin, 2023, ACS applied materials & interfaces.

Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma

Lingqi Huang, Dejun Wang, F. Qin, 2014 .

Effect of TMGa flux on GaN films deposited on Ti coated on glass substrates at low temperature

Yuemei Liu, J. Bian, Dong Zhang, 2013 .

Low resistance Ti Ohmic contacts to 4H-SiC by reducing barrier heights without high temperature annealing

Mingchao Gao, Lingqi Huang, M. Gao, 2012 .

Passivation effects of phosphorus on 4H-SiC (0001) Si dangling bonds: A first-principles study*

Wang Fangfang, Dejun Wang, Li Ling, 2017 .

Theoretical Research Progress of Carbon Existing Forms in the Oxide Layer Interface of SiC MOS Devices

Fei Yang, Dejun Wang, Yun Guang Zhu, 2016 .

Electrical and physical properties of 4H-SiC MOS interface with electron cyclotron resonance microwave nitrogen plasma post-oxidation annealing

Dejun Wang, F. Qin, Wenbo Li, 2014 .

Oxygen vacancy formation and uniformity of conductive filaments in Si-doped Ta2O5 RRAM

Yan Su, Dejun Wang, F. Qin, 2021 .

ECR Plasma in Growth of Cubic GaN by Low Pressure MOCVD

Zhan-guo Wang, Y. Sui, F. Qin, 2002 .

Low-temperature growth of highly c-oriented GaN films on Cu coated glass substrates with ECR-PEMOCVD

Yuemei Liu, J. Bian, Dong Zhang, 2013 .

Low-temperature growth of highly c-oriented InN films on glass substrates with ECR-PEMOCVD

J. Bian, Xin Jiang, Dong Zhang, 2012 .

Deposition and characteristics of GaN films on Ni metal substrate by ECR-PEMOCVD

Yuemei Liu, J. Bian, Dong Zhang, 2013, Journal of Materials Science: Materials in Electronics.

Low-temperature re-oxidation of near-interface defects and voltage stability in SiC MOS capacitors

Yan Su, Dejun Wang, F. Qin, 2020 .

Influence of N 2 Flux on InN Film Deposition on Sapphire (0001) Substrates by ECR-PEMOCVD

Xin Jiang, Dong Zhang, F. Qin, 2011 .

Enhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-annealing

Dejun Wang, F. Qin, Bingbing Liu, 2015 .