V. Popov

发表

Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO 2 matrix

V. Lashkaryov, I. Khatsevich, V. Melnik, 2008 .

Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO2 matrix

I. Khatsevich, V. Melnik, V. Popov, 2008 .

Stimulated oxygen impurity gettering under ultra-shallow junction formation in silicon

V. Litovchenko, J. Vanhellemont, V. Melnik, 2014 .

Stimulated Creation of the SOI Structures with Si Nano-Clustersw by Low–Dose SIMOX Technology

V. Litovchenko, V. Melnik, V. Kladko, 2011 .

Development of gettering processes for the preparation of the solar silicon material

N. Klyui, V. Litovchenko, A. Efremov, 2000 .

SEMICONDUCTORS AND DIELECTRICS

A. Podolian, O. Korotchenkov, A. Nadtochiy, 2019 .

Photoelectric Properties of SiGe Films Covered with Amorphous- and Polycrystalline-Silicon Layers

A. Podolian, O. Korotchenkov, A. Nadtochiy, 2019, Ukrainian Journal of Physics.

Internal field emission of microelectronic MIS structures

V. Litovchenko, I. Lisovskiĭ, V. Popov, 1990 .

Enhanced photoresponse of Ge/Si nanostructures by combining amorphous silicon deposition and annealing

A. Podolian, A. Nadtochiy, O. Korotchenkov, 2018, Journal of Applied Physics.

Effect of low-temperature annealing on photoluminescence of silicon nanocluster structures

A. Oberemok, I. Khatsevich, V. Melnik, 2010 .

Photovoltage improvements in Cz–Si by low-energy implantation of carbon ions

O. Korotchenkov, A. Nadtochiy, V. Melnik, 2016 .

SiO2 and Si3N4 Phase Formation by Ion Implantation with In-Situ Ultrasound Treatment

V. Melnik, Y. Olikh, I. Lisovskiĭ, 2005 .

Mechanisms of Dopant Depth Profile Modification During Mass Spectrometric Analysis of Multilayer Structure

V. Litovchenko, A. Efremov, V. Melnik, 2015 .

Peculiarities of the Impurity Redistribution under Ultra-Shallow Junction Formation in Silicon

V. Litovchenko, V. Vyurkov, V. Melnik, 2013 .

Formation and Transient Photovoltaic Properties of ZnO/Si Isotype Heterojunctions by Magnetron Sputtering

A. Podolian, O. Korotchenkov, A. Nadtochiy, 2020 .

Characteristics of silicon p-n junction formed by ion implantation with in situ ultrasound treatment

V. Melnik, Y. Olikh, A. Evtukh, 2005 .

Enhanced relaxation of SiGe layers by He implantation supported by in situ ultrasonic treatments

G. Weidner, D. Krüger, V. Melnik, 2005 .

Modification of the Si amorphization process by in situ ultrasonic treatment during ion implantation

D. Krüger, V. Melnik, Y. Olikh, 2001 .

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

F. Komarov, V. Litovchenko, V. P. Kostylev, 2013 .

Diffusion Length Determination by the Surface Photovoltage Method. Application to Monocrystals of II–V Compounds and Films of Amorphous Hydrogenated Silicon

V. Litovchenko, M. Stepanova, V. Popov, 1991 .