N. Taylor

发表

Ge(001) gas‐source molecular beam epitaxy on Ge(001)2×1 and Si(001)2×1 from Ge2H6: Growth kinetics and surface roughening

N. Lee, T. Bramblett, M. Hasan, 1995 .

Low-temperature growth and critical epitaxial thicknesses of fully strained metastable Ge1−xSnx (x≲0.26) alloys on Ge(001)2×1

H. Radamson, P. Desjardins, J. Greene, 1998 .

Effects of H coverage on Ge segregation during Si1−xGex gas-source molecular beam epitaxy

J. Abelson, J. Greene, N. Taylor, 1997 .

Effects of B doping on hydrogen desorption from Si(001) during gas‐source molecular‐beam epitaxy from Si2H6 and B2H6

J. Abelson, T. Spila, J. Greene, 1996 .

Si(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics

J. Abelson, T. Spila, J. Greene, 1997 .

Structure of the Si(011)-(16 × 2) surface and hydrogen desorption kinetics investigated using temperature-programmed desorption

J. Abelson, T. Spila, J. Greene, 1997 .

Hybrid surface roughening modes during low-temperature heteroepitaxy : Growth of fully-strained metastable Ge 1 2 x Sn x alloys on Ge „ 001 ... 2 3 1

T. Spila, P. Desjardins, J. Greene, 1999 .

Ge surface segregation during Si1−xGex(011) gas-source molecular beam epitaxy from Si2H6 and Ge2H6

J. Greene, H. Kim, N. Taylor, 2001 .

Kinetics of Si1−xGex(001) growth on Si(001)2×1 by gas-source molecular-beam epitaxy from Si2H6 and Ge2H6

T. Bramblett, J. Greene, N. Taylor, 1998 .

Si(011)16×2 gas-source molecular beam epitaxy: Growth kinetics

Y. Foo, P. Desjardins, J. Greene, 2000 .

Ultrahigh B doping ({<=}10{sup 22} cm{sup -3}) during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport

T. Spila, P. Desjardins, J. Greene, 2000 .

Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si0.7Ge0.3 layers on Si(001)

D. Cahill, T. Spila, P. Desjardins, 2002 .

Raman scattering from fully strained Ge1−xSnx(x⩽0.22) alloys grown on Ge(001)2×1 by low-temperature molecular beam epitaxy

Hugo R. Navarro-Contreras, O. Gurdal, P. Desjardins, 1998 .

Growth of Si1−xGex(011) on Si(011)16×2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions

T. Spila, P. Desjardins, J. Eades, 1999 .

Hybrid surface roughening modes during low-temperature heteroepitaxy: Growth of fully-strained metastable Ge{sub 1-x}Sn{sub x} alloys on Ge(001)2x1

T. Spila, P. Desjardins, J. Greene, 1999 .

B incorporation and hole transport in fully strained heteroepitaxial Si1 − xGex grown on Si(0 0 1) by gas-source MBE from Si2H6, Ge2H6, and B2H6

T. Bramblett, J. Abelson, T. Spila, 1997 .