Hongman Kim

Comparison of Fe- and p/n/p-Doped InP as a Current Blocking Layer for Monolithically Integrated InGaAsP/InP Laser Diodes with Passive Waveguides

Kwang Eui Pyun, Kwang Ryong Oh, Dae Kon Oh, 1998 .

Dammann gratings for multispot array generation by using photoinduced anisotropic materials

C. Kwak, E. Lee, Hongman Kim, 1992 .

High-performance InGaAs/InP avalanche photodiode for a 2.5 Gb s-1 optical receiver

Yong-hee Lee, Seung-Youl Kang, Hyung‐Moo Park, 1995 .

Effects of heat-up procedure and grating depth on the erosion of InGaAs grating

K. Pyun, Hongman Kim, J. Kim, 1997 .

Microstructural and electrical investigations of Pd/Ge/Ti/Au ohmic contact to n‐type GaAs

C. G. Park, J. Kwak, C. Park, 1996 .

The effect of strain on the dielectric constants of strained In0.7Ga0.3AsyP1−y films

Hye-Rim Kim, K. Pyun, Hongman Kim, 1997 .

Optimization of growth conditions for the OMVPE grown InAsP/InP quantum well

K. Suh, K. Pyun, Seung Won Lee, 1996, Proceedings of 8th International Conference on Indium Phosphide and Related Materials.

The contraction of lattice constant and the reduction of growth rate in p-InGaAs grown by organometallic vapor phase epitaxy

D. Oh, Hyung‐Moo Park, D. Jang, 1995 .

Uniform and high coupling efficiency between InGaAsP-InP buried heterostructure optical amplifier an

Kwang Eui Pyun, Kwang Ryong Oh, Joo-Heon Ahn, 1996 .