J. Herman

发表

Optimization of photoluminescence from W centers in a silicon-on-insulator.

R. Mirin, A. Tait, J. Shainline, 2019, Optics express.

Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

J. Bowers, D. Harame, G. Leake, 2022, Light: Science & Applications.

Application of cluster Ion (carbon) implantation for strain applications

S. Novak, H. Onoda, M. Rodgers, 2012, 2012 12th International Workshop on Junction Technology.

Investigation and optimization of InGaAs/InP heterointerfaces grown by chemical beam epitaxy using spectroscopic ellipsometry and photoluminescence

G. Haddad, G. Munns, M. Sherwin, 1992 .

Heavily tellurium doped n-type InGaAs grown by MOCVD on 300 mm Si wafers

Aras Norvilas, Joshua Herman, Alexey Vert, 2015 .

Subnanometer-resolution depth profiling of boron atoms and lattice defects in silicon ultrashallow junctions by ion beam techniques

L. Vanamurthy, B. Doris, P. Ronsheim, 2013 .

Study of millisecond laser annealing on recrystallization, activation, and mobility of laser annealed SOI doped via arsenic ion implantation

M. Rodgers, D. Franca, A. Basavalingappa, 2015 .

Backside and edge cleaning of III–V on Si wafers for contamination free manufacturing

T. Orzali, V. Kaushik, R. Hill, 2015, 2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).

Epitaxial growth of GaSb and InAs fins on 300 mm Si (001) by aspect ratio trapping

Serge Oktyabrsky, Joshua Herman, Alexey Vert, 2016 .

GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction

Satyavolu S. Papa Rao, T. Orzali, R. Hill, 2015 .

Growth and characterization of an In0.53Ga0.47As-based Metal-Oxide-Semiconductor Capacitor (MOSCAP) structure on 300mm on-axis Si (001) wafers by MOCVD

Satyavolu S. Papa Rao, P. Hung, T. Orzali, 2015 .