R. Tsai

Room-temperature photoluminescence in Er-doped deuterated amorphous carbon

L. Qian, N. Kherani, R. Tsai, 2009, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference.

Room-temperature photoluminescence in erbium-doped deuterated amorphous carbon prepared by low-temperature MO-PECVD.

L. Qian, N. Kherani, Hossein Alizadeh, 2009, Optics express.

In situ formation of Y‐Ba‐Cu‐O epitaxial films by 40.68‐MHz rf magnetron sputtering

R. Tsai, J. Chu, L. Wang, 1991 .

Effect of Cu concentration on the reactions between Sn-Ag-Cu solders and Ni

Y. L. Lin, C. Kao, C. E. Ho, 2002 .

Characteristics of composite CaF2-SiO2 films as a low-index coating material in UV region

F. Ho, R. Tsai, C. Chu, 1997, Optical Interference Coatings.

High performance and high yield sub-240 nm AlN:GaN short period superlattice LEDs grown by MBE on 6 in. sapphire substrates

W. J. Toe, An-Fan Liu, P. Atanackovic, 2023, Applied Physics Letters.

MO-PECVD (METAL-ORGANIC PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION) OF ERBIUM-DOPED HYDROGENATED AND DEUTERATED AMORPHOUS CARBON

R. Tsai, 2008 .