H. Tu

Fabrication of source and drain regions of self-aligned ZrInZnO thin-film transistors using a solution of tin and poly(propylene carbonate)

T. Shimoda, S. Inoue, H. Tu, 2015 .

P-1: Distinguished Poster: Fabrication of a Self-Aligned ZrInZnO Thin-Film Transistor Using Polypropylene Carbonate Solution

T. Shimoda, S. Inoue, Fujimoto Nobutaka, 2014 .

Low Cost Fabrication of Back Contact Crystalline-Silicon Heterojunction Solar Cells with n-a-Si Layers Partially Converted from p-a-Si by Phosphine (PH3) Plasma Ion-Implantation

K. Ohdaira, H. Matsumura, N. Yamaguchi, 2018, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).

Conversion of the conduction type of a catalytic-chemical-vapor-deposited p-type a-Si by PH3 plasma ion implantation

K. Ohdaira, H. Matsumura, N. Yamaguchi, 2019, Thin Solid Films.

Texture size control by mixing glass microparticles with alkaline solution for crystalline silicon solar cells

K. Ohdaira, C. T. Nguyen, H. Matsumura, 2018, Journal of Materials Research.

Application of Si-related Ultrathin (∼1 nm) Films to Crystalline Silicon Solar Cells

K. Ohdaira, H. Nakajima, H. Tu, 2023, Vacuum and Surface Science.

High-Performance Solution-Processed ZrInZnO Thin-Film Transistors

Phan Trong Tue, S. Inoue, E. Tokumitsu, 2013, IEEE Transactions on Electron Devices.

High-quality surface passivation of crystalline silicon with chemical resistance and optical transparency by using catalytic chemical vapor deposition SiNx layers and an ultrathin SiOx film

K. Ohdaira, C. T. Nguyen, H. Matsumura, 2018, Japanese Journal of Applied Physics.

Hole‐Selective Ultrathin Al‐Doped SiOx Passivation Layer Formed by Immersing in Aluminum Nitrate Aqueous Solution

K. Ohdaira, H. Nakajima, H. Tu, 2022, physica status solidi (RRL) – Rapid Research Letters.