S. Goswami

Integrated Quantum Well Bipolar Devices for Tunable Detection and Optical Logic Applications

P. Bhattacharya, J. Singh, S. Goswami, 1991, ESSDERC '91: 21st European Solid State Device Research Conference.

Low-power exciton-based heterojunction bipolar transistors for thresholding logic applications

P. Bhattacharya, Songcheol Hong, Jasprit Singh, 1991 .

Programmable memory cell using quantum confined Stark effect in multi-quantum well heterojunction bipolar transistor

P. Bhattacharya, Jasprit Singh, S. Goswami, 1991 .

Quantum dots in Si/SiGe 2DEGs with Schottky top-gated leads

S. Coppersmith, R. Blick, R. Joynt, 2005, cond-mat/0508107.

Coulomb blockade in a silicon/silicon-germanium two-dimensional electron gas quantum dot

D. E. Savage, M. G. Lagally, S. N. Coppersmith, 2004, cond-mat/0404399.

OMVPE grown GalnAs: C for HBTs

C. Caneau, R. Bhat, M. Koza, 1996 .

Temporal response of photodiodes with GaAs/AlxGa1−xAs (0.1≤x≤0.3) multiquantum well absorption regions

P. Bhattacharya, L. Davis, S. Goswami, 1992 .

Temporal response characteristics of a In/sub 0.53/Ga/sub 0.47/As/InP quantum well phototransistor

P. Bhattacharya, J. Cowles, S. Goswami, 1993 .

Effect of strain and barrier height on performance characteristics of multiquantum well avalanche photodiodes

P. Bhattacharya, A. Gutierrez-Aitken, S. Goswami, 1992, 1992 International Technical Digest on Electron Devices Meeting.

InP/GaAsSb/InP and InP/GaAsSb/InGaAsP double heterojunction bipolar transistors with a carbon‐doped base grown by organometallic chemical vapor deposition

Rajaram Bhat, Catherine Caneau, M. A. Koza, 1996 .