S. Damgaard

发表

Systematic experimental and theoretical studies of the lattice vibrations of host atoms and substitutional Sn impurities in III–V semiconductors

G. Weyer, J. W. Petersen, O. H. Nielsen, 1983 .

On the structure of fluorine defects in amorphous and crystalline silicon studied by hyperfine interaction and channeling methods

I. Stensgaard, G. Weyer, K. B. Nielsen, 2008 .

Internal oxidation of sp-Impurities in silver studied by119Sn Mössbauer spectroscopy

G. Weyer, J. W. Petersen, S. Damgaard, 1983 .

The electric quadrupole hyperfine interaction at sites of ion-implanted fluorine in amorphous and crystalline silicon

I. Stensgaard, T. Lauritsen, G. Weyer, 1984 .

Mössbauer study of the formation of impurity-vacancy complexes in copper

G. Weyer, J. W. Petersen, S. Damgaard, 1983 .

A Mössbauer study of impurity-vacancy defects in copper

G. Weyer, J. W. Petersen, S. Damgaard, 1982 .

Isomer shifts and force constants of substitutional 119Sn impurity atoms in FCC metals

G. Weyer, J. W. Petersen, S. Damgaard, 1983 .

Radiogenic Sn defects in aluminium from implantations of 119mSn and 119Sb (Mossbauer study)

G. Weyer, J. W. Petersen, S. Damgaard, 1981 .

Internal oxidation of 5sp impurities in noble metals

G. Weyer, J. W. Petersen, S. Damgaard, 1985 .

The tin-vacancy pair defect in silicon

G. Weyer, J. W. Petersen, S. Damgaard, 1981 .

Radiogenic Defects in Semiconductors

G. Weyer, J. W. Petersen, S. Damgaard, 1980 .

The nature of radiogenic Sn defects in group-IV elements

G. Weyer, J. W. Petersen, S. Damgaard, 1981 .

Radiogenic Sn Impurity Defects in Germanium

G. Weyer, J. W. Petersen, S. Damgaard, 1980 .

A mössbauer-spectroscopy study of the annealing of supersaturated solutions of57Co in silicon

G. Weyer, J. W. Petersen, S. Damgaard, 1983 .

Site-Selective Doping of Compound Semiconductors by Ion Implantation of Radioactive Nuclei

J. Heinemeier, G. Weyer, J. W. Petersen, 1980 .

Laser implantation of impurity atoms into silicon and gallium‐arsenide single crystals

G. Weyer, J. W. Petersen, S. Damgaard, 1981 .

Mössbauer Conversion Electron and Rutherford Backscattering Analysis of Laser-Implanted Fe and Sn in Silicon

G. Weyer, J. W. Petersen, S. Damgaard, 1980 .

EFG sign for Sn in Zn, Cd, and Sb

G. Weyer, J. W. Petersen, S. Damgaard, 1983 .

Defect structures of ion-implanted α-tin

G. Weyer, J. W. Petersen, S. Damgaard, 1980 .

Sn impurity defects in germanium from ion implantations of radioactive 119In

J. Heinemeier, G. Weyer, J. W. Petersen, 1980 .

119Sn Mössbauer study of the implantation behaviour of119In,119Sn,119mSn,119Sb and119mTe ions in SiC

W. J. Choyke, G. Weyer, J. W. Petersen, 1985 .

Sn-vacancy defects in GaP

G. Weyer, J. W. Petersen, S. Damgaard, 1983 .

The electronic configuration of amphoteric Sn dopants in III-V compound semiconductors

G. Weyer, J. W. Petersen, S. Damgaard, 1983 .

Sn In silicon carbide: A mossbauer and channeling study

I. Stensgaard, G. Weyer, J. W. Petersen, 1981 .

Comparison of impurity defect structures formed by ion implantations in amorphous and crystalline silicon

J. Heinemeier, G. Weyer, J. W. Petersen, 1982 .

Knowledge-based data mining

Sholom M. Weiss, Stephen J. Buckley, Shubir Kapoor, 2003, KDD '03.