Y. Nonogaki

发表

Hot carrier relaxation dynamics in In0.53Ga0.47As studied by femtosecond pump–probe spectroscopy

Y. Fujiwara, A. Nakamura, Y. Takeda, 1999 .

Cathodoluminescence study of selective epitaxial growth of InxGa1-xAs (x∼0.53) thin quantum wells on InP pyramid structures on a masked substrate

Y. Fujiwara, Y. Takeda, A. Nakamura, 2002 .

Nanostructure formation on Si (111) surface assisted by synchrotron radiation illumination

Yongli Gao, H. Mekaru, T. Urisu, 2001 .

Fabrication of avidin single molecular layer on silicon oxide surfaces and formation of tethered lipid bilayer membranes

T. Urisu, N. Misawa, R. Tero, 2005 .

Drastic effects of hydrogen flow rate on growth characteristics and electrical/optical properties of InP grown by organometallic vapour phase epitaxy with TMIn and TBP

Y. Fujiwara, Y. Takeda, Y. Nonogaki, 1995 .

Er-related luminescence from self-assembled InAs quantum dots doped with Er by organometallic vapor-phase epitaxy

Y. Fujiwara, A. Nakamura, Y. Takeda, 2000 .

Formation of InAs islands on InP (001) by droplet hetero-epitaxy

Y. Takeda, Y. Nonogaki, T. Iguchi, 1997 .

Optically Detected Far-Infrared Magnetoabsorption in InGaAs

H. Nakata, Y. Fujiwara, Y. Takeda, 1999 .

Er-related luminescence in Er,O-codoped InGaAs/GaAs multiple-quantum-well structures grown by organometallic vapor phase epitaxy

A. Koizumi, Y. Fujiwara, Y. Takeda, 2002 .

Synchrotron radiation induced Si-H dissociation on H-Si(111)-1 ×1 surfaces studied by in situ monitoring in the undulator-scanning tunneling microscope system

T. Urisu, Y. Nonogaki, 2005 .

Construction of the undulator beamline equipped with a UHV-STM for observations of synchrotron-radiation-stimulated surface reaction

M. Katoh, T. Urisu, Y. Nonogaki, 2005 .

Design and Performance of Undulator Beamline (BL7U) for in‐situ Observation of Synchrotron Radiation Stimulated Etching by STM

M. Katoh, E. Shigemasa, T. Urisu, 2004 .

Giant Vesicle Fusion on Microelectrodes Fabricated by Femtosecond Laser Ablation Followed by Synchrotron Radiation Etching

Yong‐Hoon Kim, T. Urisu, M. Rahman, 2005 .

Patterning SiO2 thin films using synchrotron radiation stimulated etching with a Co contact mask

T. Urisu, Changshun Wang, S. Yamamura, 2003 .

Hydrogen Diffusion and Chemical Reactivity with Water on Nearly Ideally H-terminated Si(100) Surface

H. Noda, T. Urisu, N. Yabumoto, 2002 .

Erbium Doping to P-Based III-V Semiconductors by OMVPE with TBP as a Non-Toxic P Source

Yoshiaki Ito, K. Fujita, Y. Fujiwara, 1995 .

Composition dependence of energy structure and lattice structure in InGaAs/GaP

A. Koizumi, Y. Fujiwara, Y. Takeda, 2004 .

InAs dots grown on InP (001) by droplet hetero-epitaxy using OMVPE

Y. Fujiwara, Y. Takeda, Y. Nonogaki, 1998 .

Orientation of avidin molecules immobilized on COOH-modified SiO2/Si(100) surfaces

T. Urisu, N. Misawa, R. Tero, 2006 .

IR line width broadening at nearly ideal H-termination region on Si(100) surfaces

H. Noda, T. Urisu, N. Yabumoto, 2002 .

Influence of substrate roughness on the formation of self-assembled monolayers (SAM) on Silicon [100]

T. Urisu, H. Graaf, Y. Nonogaki, 2001, Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468).