G. van den Bosch

Understanding of the temperature dependence of channel hot-carrier degradation in the range 77 K to 300 K

P. Heremans, R. Bellens, G. Groeseneken, 1989, International Technical Digest on Electron Devices Meeting.

Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

J. Ackaert, E. De Backer, C. Salm, 2002, Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614).