M. Vilmay

Copper line topology impact on the SiOCH low-k reliability in sub 45nm technology node. From the time-dependent dielectric breakdown to the product lifetime

F. Volpi, C. Monget, M. Vilmay, 2009, 2009 IEEE International Reliability Physics Symposium.

Characterization of low-k SiOCH dielectric for 45nm technology and link between the dominant leakage path and the breakdown localization

David Roy, F. Volpi, D. Roy, 2008 .

Copper-Line Topology Impact on the Reliability of SiOCH Low- $k$ for the 45-nm Technology Node and Beyond

F. Volpi, C. Monget, M. Vilmay, 2008, IEEE Transactions on Device and Materials Reliability.

Capacitance variation under electrical stress of SiOCH low-k dielectrics for the advanced 45nm technology node and beyond

F. Volpi, S. Blonkowski, M. Vilmay, 2009, 2009 IEEE International Integrated Reliability Workshop Final Report.

MUST2: A new generation array for direct reaction studies

Y. Blumenfeld, B. Paul, F. Druillole, 2005 .

Key Process steps for high reliable SiOCH low-k dielectrics for the sub 45nm technology nodes

L. Arnaud, S. Chhun, C. Besset, 2009, 2009 IEEE International Interconnect Technology Conference.