D.A.J. Moran

Monte Carlo Simulations of High-Performance Implant Free In$_{0.3}$Ga $_{0.7}$As Nano-MOSFETs for Low-Power CMOS Applications

A. Asenov, M. Passlack, K. Kalna, 2007, IEEE Transactions on Nanotechnology.

Self-aligned 0.12 /spl mu/m T-gate In/sub .53/Ga/sub .47/As/In/sub .52/Al/sub .48/As HEMT technology utilising a non-annealed ohmic contact strategy

A. Asenov, I. Thayne, E. Boyd, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

High Mobility III-V MOSFETs For RF and Digital Applications

A. Asenov, P. Fejes, X. Li, 2007, 2007 IEEE International Electron Devices Meeting.