A.M. Young

Reliability of a 300-mm-compatible 3DI technology based on hybrid Cu-adhesive wafer bonding

K.-N. Chen, S. Purushothaman, S. Purushothaman, 2006, 2009 Symposium on VLSI Technology.

A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid Cu-adhesive bonding

X. Gu, K.-N. Chen, W. Haensch, 2008, 2008 IEEE International Electron Devices Meeting.

Enabling SOI-based assembly technology for three-dimensional (3d) integrated circuits (ICs)

J. Patel, Anna W. Topol, A. Kumar, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..