Yoshio Nishi

发表

Integration Challenges and Opportunities of Nanoelectronic Devices

Yoshio Nishi, 2009 .

Modeling of resistive random access memory (RRAM) switching mechanisms and memory structures

Yoshio Nishi, Katsumasa Kamiya, Moon Young Yang, 2014 .

The Orthographic Standardization of Burmese: Linguistic and Sociolinguistic Speculations

Yoshio Nishi, 西義郎, ニシヨシオ, 1998 .

Impact of pulse rise time on programming of cross-point RRAM arrays

Shimeng Yu, Bing Chen, Peng Huang, 2014, Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

Bidirectional Analog Conductance Modulation for RRAM-Based Neural Networks

Yoshio Nishi, H.-S. Philip Wong, Zizhen Jiang, 2020, IEEE Transactions on Electron Devices.

Comparison of new technologies for VLSI: possibilities and limitations

Yoshio Nishi, 1981 .

Revolutionary Nanoelectronic Devices and Processes for Post 32nm CMOS Era

Yoshio Nishi, 2009 .

Pulse-train measurement techniques: An RRAM test vehicle for in-depth physical understanding

Liang Zhao, Yoshio Nishi, 2014, 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

VLSI/ULSI research methodology in the US and Japan

Yoshio Nishi, 1991, 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers.

Understanding of switching phenomena in unipolar NiO-based RRAM

Yoshio Nishi, Hyung Dong Lee, Y. Nishi, 2010, 2010 IEEE Globecom Workshops.

Improved multi-level control of RRAM using pulse-train programming

Tuo-Hung Hou, Liang Zhao, Yoshio Nishi, 2014, Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

A CMOS-compatible boosted transistor having >2× drive current and low leakage current

Jin-Woo Han, Yoshio Nishi, Victor Moroz, 2016, 2016 46th European Solid-State Device Research Conference (ESSDERC).

Ab initio modeling of resistive switching mechanism in binary metal oxides

Liang Zhao, Yoshio Nishi, Katsumasa Kamiya, 2014, 2014 IEEE International Symposium on Circuits and Systems (ISCAS).

Invited) Theoretical Design of Desirable Stack Structure for Resistive Random Access Memories

Yoshio Nishi, Katsumasa Kamiya, Moon Young Yang, 2013 .

Perspective of silicon-based IC technology

Yoshio Nishi, 1995, 1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings.

Quasi-passive and reconfigurable node for optical access network

Leonid G. Kazovsky, Olav Solgaard, Yoshio Nishi, 2010, CLEO/QELS: 2010 Laser Science to Photonic Applications.

Design and optimization methodology for 3D RRAM arrays

Shimeng Yu, Bing Chen, Jinfeng Kang, 2013, 2013 IEEE International Electron Devices Meeting.

First principles modeling of charged oxygen vacancy filaments in reduced TiO2-implications to the operation of non-volatile memory devices

Liang Zhao, Yoshio Nishi, Blanka Magyari-Köpe, 2013, Math. Comput. Model..

Performance Prediction of Large-Scale 1S1R Resistive Memory Array Using Machine Learning

Peng Huang, Shimeng Yu, Jinfeng Kang, 2015, 2015 IEEE International Memory Workshop (IMW).

Impact of scaling and the scaling development environment

Yoshio Nishi, 2007, IEEE Solid-State Circuits Newsletter.

Semiconductor Interfaces and Their Implications to VLSI Device Reliability

Yoshio Nishi, 1994 .

Invited) The Interplay between Electronic and Ionic Transport in the Resistive Switching Process of Random Access Memory Devices

Liang Zhao, Yoshio Nishi, Katsumasa Kamiya, 2014 .

Towards high-speed, write-disturb tolerant 3D vertical RRAM arrays

Shimeng Yu, Bing Chen, Peng Huang, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

Germanium Surface Cleaning with Hydrochloric Acid

Jim McVittie, Yoshio Nishi, Krishna Saraswat, 2006 .

Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si

David A. B. Miller, Shen Ren, Krishna C. Saraswat, 2009 .

Sequential Electronic and Structural Transitions in VO2 Observed Using X‐ray Absorption Spectromicroscopy

Matthew D. Pickett, John Paul Strachan, R. Stanley Williams, 2014, Advanced materials.

Microsecond transient thermal behavior of HfOx-based resistive random access memory using a micro thermal stage (MTS)

H.-S. Philip Wong, Yoshio Nishi, Hong-Yu Chen, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Electronic correlation effects in reduced rutile TiO 2 within the LDA+U method

Yoshio Nishi, Blanka Magyari-Köpe, Seong-Geon Park, 2010 .

Suppression of Anomalous Drain Current in Short Channel MOSFET

Yoshio Nishi, Masami Konaka, H. Iwai, 1979 .

Damage Identification of CFRP Laminated Cantilever Beam by Using Neural Network

Yoshio Nishi, C. Bellouard, O. I. Byon, 1997 .

Filament-Induced Anisotropic Oxygen Vacancy Diffusion and Charge Trapping Effects in Hafnium Oxide RRAM

Dan Duncan, Yoshio Nishi, Blanka Magyari-Kope, 2016, IEEE Electron Device Letters.

Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3

Yoshio Nishi, Blanka Magyari-Köpe, Hyung Dong Lee, 2011, Nanotechnology.

Polaronic interactions between oxygen vacancies in rutile Ti O 2

Liang Zhao, Yoshio Nishi, Blanka Magyari-Köpe, 2017 .

Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors.

John Paul Strachan, Yoshio Nishi, Tolek Tyliszczak, 2016, Advanced materials.

Effect of oxide overlayer formation on the growth of gold catalyzed epitaxial silicon nanowires

Emanuel Tutuc, Yoshio Nishi, Mark C. Reuter, 2006 .

Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories

Masaaki Niwa, Yoshio Nishi, Katsumasa Kamiya, 2013 .

P-Channel versus N-Channel in MOS-ICs of Submicron Channel Lengths

Shinji Taguchi, Luong Mo Dang, Yoshio Nishi, 1980 .

Electric field dependent switching and degradation of Resistance Random Access Memory

Yoshio Nishi, Keiji Hosotani, Seong-Geon Park, 2009, 2009 IEEE International Integrated Reliability Workshop Final Report.

The effects of vacuum ultraviolet radiation on low-k dielectric films

Sebastian Engelmann, Qinghuang Lin, Nicholas C. M. Fuller, 2012 .

Lithium-Ion Secondary Batteries with Gelled Polymer Electrolytes

Yoshio Nishi, 2005 .

An ultraclean tip-wear reduction scheme for ultrahigh density scanning probe-based data storage.

Quan Tran, Yoshio Nishi, Robert J. Chen, 2010, ACS nano.

ON-OFF switching mechanism of resistive–random–access–memories based on the formation and disruption of oxygen vacancy conducting channels

Masaaki Niwa, Yoshio Nishi, Katsumasa Kamiya, 2012 .

Silicon on Sapphire technology

Yoshio Nishi, 1976, ESSCIRC 76: 2nd European Solid State Circuits Conference.

Charge Trapping within UV and Vacuum UV Irradiated Low-k Porous Organosilicate Dielectrics

Yoshio Nishi, J. L. Shohet, J. L. Lauer, 2010 .

Invited) Physics and Device Technology of Silicon on Sapphire

Yoshio Nishi, Hisashi Hara, 1978 .

Experimental investigation of a PtSi source and drain field emission transistor

C. R. Helms, Yoshio Nishi, Y. Nishi, 1995 .

Effect of isochronal hydrogen annealing on surface roughness and threading dislocation density of epitaxial Ge films grown on Si

Krishna C. Saraswat, Yoshio Nishi, S. Kobayashi, 2010 .

A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in ${\rm Pt}/{\rm Hf}{\rm O}_{2}/{\rm Pt}$ Resistive Random Access Memory

Gerard Ghibaudo, Elisa Vianello, Yoshio Nishi, 2014, IEEE Transactions on Electron Devices.

Achieving direct band gap in germanium through integration of Sn alloying and external strain

Krishna C. Saraswat, Yoshio Nishi, Blanka Magyari-Köpe, 2013 .

InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design

Krishna C. Saraswat, Mario G. Ancona, J. B. Boos, 2011 .

High performance, uniaxially-strained, silicon and germanium, double-gate p-MOSFETs

Siegfried Selberherr, Krishna C. Saraswat, Christoph Jungemann, 2007 .

Measurement of bandgap energies in low-k organosilicates

Qinghuang Lin, Wei Li, Yoshio Nishi, 2014 .

Field-programmable rectification in rutile TiO2 crystals

Zheng Wang, Yoshio Nishi, Peter B. Griffin, 2007 .

The nature of the defects generated from plasma exposure in pristine and ultraviolet-cured low-k organosilicate glass

Yoshio Nishi, J. L. Shohet, G. A. Antonelli, 2011 .

A semiclassical model of dielectric relaxation in glasses

James D. Plummer, Yoshio Nishi, Peter B. Griffin, 2006 .

Resistive Switching Mechanism in Zn x Cd 1−x S Nonvolatile Memory Devices

Zheng Wang, Jim McVittie, Yoshio Nishi, 2007 .

Redistribution of Diffused Boron in Silicon by Thermal Oxidation

Yoshio Nishi, Taketoshi Kato, Y. Nishi, 1964 .

Defects in low-k organosilicate glass and their response to processing as measured with electron-spin resonance

Yoshio Nishi, J. L. Shohet, G. A. Antonelli, 2011 .

Charging response of back-end-of-the-line barrier dielectrics to VUV radiation

Yoshio Nishi, J. L. Shohet, J. L. Lauer, 2012 .

Performance of the First Lithium Ion Battery and Its Process Technology

Yoshio Nishi, Y. Nishi, 2007 .

Local Temperature Redistribution and Structural Transition During Joule‐Heating‐Driven Conductance Switching in VO2

Matthew D. Pickett, John Paul Strachan, R. Stanley Williams, 2013, Advanced materials.

Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors

Alberto Salleo, Zhenan Bao, Mingqian He, 2015, Scientific Reports.

Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate.

Jesse Lu, Yoshio Nishi, Jelena Vuckovic, 2009, Optics express.

A novel Bi-stable 1-transistor SRAM for high density embedded applications

Jin-Woo Han, Yoshio Nishi, Zvi Or-Bach, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Electroluminescence from Strained Ge membranes and Implications for an Efficient Si-Compatible Laser

Donguk Nam, Yoshio Nishi, Mark Brongersma, 2012 .

Ultrafast Accelerated Retention Test Methodology for RRAM Using Micro Thermal Stage

H.-S. Philip Wong, Yoshio Nishi, Hong-Yu Chen, 2017, IEEE Electron Device Letters.

Experimental demonstration of high source velocity and its enhancement by uniaxial stress in Ge PFETs

Jerome Mitard, Marc Heyns, Marc Meuris, 2010, 2010 Symposium on VLSI Technology.

Physical origins of current and temperature controlled negative differential resistances in NbO2

John Paul Strachan, R. Stanley Williams, Yoshio Nishi, 2017, Nature Communications.

Spatially uniform resistance switching of low current, high endurance titanium-niobium-oxide memristors.

Yoshio Nishi, David Vine, Noraica Davila, 2017, Nanoscale.

DNA functionalization of carbon nanotubes for ultrathin atomic layer deposition of high kappa dielectrics for nanotube transistors with 60 mV/decade switching.

Yoshio Nishi, Li Zhang, Sarunya Bangsaruntip, 2006, Journal of the American Chemical Society.

Measurements of Schottky barrier at the low-k SiOC:H/Cu interface using vacuum ultraviolet photoemission spectroscopy

Sean W. King, Yoshio Nishi, J. L. Shohet, 2015 .

Transient dynamics of NbOx threshold switches explained by Poole-Frenkel based thermal feedback mechanism

H.-S. Philip Wong, Yoshio Nishi, Suhas Kumar, 2018 .

Contact Engineering High Performance n-Type MoTe2 Transistors.

Eric Pop, Robert M. Wallace, Yoshio Nishi, 2019, Nano letters.

Role of Hydrogen Ions in TiO2-Based Memory Devices

Yoshio Nishi, John R. Jameson, 2011 .

Oxygen migration during resistance switching and failure of hafnium oxide memristors

John Paul Strachan, R. Stanley Williams, Yoshio Nishi, 2017, 1703.03106.

Hydrogen-Induced Oxygen Vacancy Bistability and Its Impact on RRAM Device Operation

Yoshio Nishi, Blanka Magyari-Köpe, Y. Nishi, 2017, IEEE Electron Device Letters.

Properties of Dopants in HfO x for Improving the Performance of Nonvolatile Memory

Dan Duncan, Yoshio Nishi, Blanka Magyari-Köpe, 2017 .

Ab initio study of Al-Ni bilayers on SiO2 : Implications to effective work function modulation in gate stacks

Luigi Colombo, Kyeongjae Cho, Yoshio Nishi, 2009 .

Lithium Ion Secondary Batteries

Yoshio Nishi, 1998 .

Silicon-based photonic crystal nanocavity light emitters

Yoshio Nishi, Jelena Vuckovic, Maria Makarova, 2006 .

Radical oxidation of germanium for interface gate dielectric GeO2 formation in metal-insulator-semiconductor gate stack

Krishna C. Saraswat, Piero Pianetta, Masaharu Kobayashi, 2009 .

(Invited) Physics and Device Technology of Silicon on Sapphire

Yoshio Nishi, Hisashi Hara, Y. Nishi, 1977 .

Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen

Steven A. Ringel, Yoshio Nishi, T. P. Ma, 2013 .

Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations

Liang Zhao, Malgorzata Jurczak, Yoshio Nishi, 2015 .

Direct band Ge photoluminescence near 1.6 μm coupled to Ge-on-Si microdisk resonators

Jesse Lu, Yoshio Nishi, Jelena Vuckovic, 2010 .

Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I

Yoshio Nishi, Y. Nishi, A. Ohwada, 1971 .

Changes to Charge and Defects in Dielectrics from Ion and Photon Fluences during Plasma Exposure

Yoshio Nishi, J. L. Shohet, Y. Nishi, 2011 .

Challenges and opportunities for future non-volatile memory technology

Yoshio Nishi, Y. Nishi, 2011 .

Ti-electrode effects of NiO based resistive switching memory with Ni insertion layer

Yoshio Nishi, Seung Wook Ryu, Young Bae Ahn, 2012 .

Cavity-enhanced direct band electroluminescence near 1550 nm from germanium microdisk resonator diode on silicon

Krishna C. Saraswat, Jesse Lu, Yoshio Nishi, 2011 .

Contact engineering for organic semiconductor devices via Fermi level depinning at the metal-organic interface

Zhenan Bao, Masaharu Kobayashi, Yoshio Nishi, 2010 .

Model of metallic filament formation and rupture in NiO for unipolar switching

Yoshio Nishi, Blanka Magyari-Köpe, Hyung Dong Lee, 2010 .

Defect-induced bandgap narrowing in low-k dielectrics

Sean W. King, Yoshio Nishi, J. L. Shohet, 2015 .

Advances in Non-volatile Memory and Storage Technology

Yoshio Nishi, Y. Nishi, 2014 .

R&D Organization in Japanese and American Semiconductor Firms

Yoshio Nishi, Daniel I. Okimoto, Y. Nishi, 1994 .