Patrick Jean Paniez

发表

New approach to PEB mechanisms in novolac-DNQ resists: influence of physical and viscoelastic properties

Olivier Toublan, Helene Peloso, Alain Prola, 1997, Advanced Lithography.

Understanding advanced lithographic materials: challenges and new characterization techniques

Charles Rosilio, Alain Prola, Patrick Jean Paniez, 1999, Other Conferences.

Use of wafer curvature measurement (WCM) techniques in the determination of the process window of positive DUV resists

Patrick Jean Paniez, Andre Schiltz, 1995, Advanced Lithography.

Bake mechanisms in novolak-based photoresist films: investigation by contact angle measurements

Patrick Jean Paniez, Emilienne Fadda, C. Clarisse, 1996, Advanced Lithography.

Study of bake mechanisms by real-time in-situ ellipsometry

Patrick Jean Paniez, Bénédicte Mortini, Aime Vareille, 1998, Advanced Lithography.

Physical description of lithographic processes: correlation between bake conditions and photoresist contrast

Gilles Festes, Patrick Jean Paniez, Jean-Paul E. Chollet, 1992, Advanced Lithography.

Modulated-temperature DSC (MT-DSC): a new technique for the extensive thermal characterization of complex chemically amplified systems

Patrick Jean Paniez, S. Brun, Samir Derrough, 1997, Advanced Lithography.

Origin of delay times in chemically amplified positive DUV resists

Francoise Vinet, Charles Rosilio, Patrick Jean Paniez, 1994, Advanced Lithography.

Thermal properties of state of the art novolak-diazonaphtoquinone systems: differences between bulk and film properties

Patrick Jean Paniez, Jean-Paul E. Chollet, Michel Pons, 1993, Advanced Lithography.

Undercut elimination in DUV negative systems: application to lithography and etching of metal levels

Michel Heitzmann, Dominique Poncet, Bernard Previtali, 1996, Advanced Lithography.

Minimization of the iso-dense bias in chemically amplified 193-nm positive resists: influence and monitoring of the diffusion well

Alain Prola, Patrick Jean Paniez, Pierre-Olivier Sassoulas, 2000, Advanced Lithography.

Role of surface tension in silylation processes

Olivier Joubert, Gilles R. Amblard, André Weill, 1993, Advanced Lithography.

Processing of acrylate-based 193-nm resists: influence of physico-chemical properties

Charles Rosilio, Alain Prola, Patrick Jean Paniez, 1998, Advanced Lithography.

Optimization of CD control in DUV positive resists: influence of photoresist viscoelastic properties on PEB conditions

Pierre Fanton, Francoise Vinet, Laurent Pain, 1995, Advanced Lithography.

Physico-chemical properties of polymers for 193-nm lithography incorporating alicyclic norbornene-alt-maleic anhydride structures

Charles Rosilio, Patrick Jean Paniez, Pierre-Olivier Sassoulas, 1999, Advanced Lithography.

Application of contact angle measurements to lithographic processes

Patrick Jean Paniez, Emilienne Fadda, C. Clarisse, 1996 .

Bottom anti-reflective coatings: control of thermal processing

Patrick Jean Paniez, S. Brun, A. Schiltz, 1996 .

Free volume effects in chemically amplified DUV positive resists

Laurent Pain, Charles Rosilio, Patrick Jean Paniez, 1996 .

Improvement of Post-Exposure Delay Stability in Alicyclic ArF Excimer Photoresists

C. Grant Willson, Kyle Patterson, Patrick Jean Paniez, 1999 .