T. C. McGill

发表

HIGH-FREQUENCY OSCILLATORS BASED ON RESONANT TUNNELING

Elliott R. Brown, T. C. L. G. Sollner, J. R. Söderström, 1991 .

The role of materials in the electronics world of 2012 A.D.: An update

T. C. McGill, 1999 .

The influence of interface states on incomplete charge transfer in overlapping gate charge-coupled devices

Carver A. Mead, T. C. McGill, Y. Daimon, 1973 .

Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors

T. C. McGill, Wolfgang Gebhardt, C. M. Sotomayor Torres, 1989 .

Overlapping-gate buried-channel charge-coupled devices

T. C. McGill, T. A. Zimmerman, A. M. Mohsen, 1973 .

Integration of a resonant‐tunneling structure with a metal‐semiconductor field‐effect transistor

T. K. Woodward, Harlan F. Chung, T. C. McGill, 1987 .

Electron diffusion length and lifetime in p-type GaN

T. C. McGill, Zvonimir Z. Bandic, E. C. Piquette, 1998 .

Push clocks: a new approach to charge‐coupled devices clocking

Carver A. Mead, T. C. McGill, A. M. Mohsen, 1973 .

Correlation between the surface defect distribution and minority carrier transport properties in GaN

T. C. McGill, Zvonimir Z. Bandic, E. C. Piquette, 1998 .

High voltage (450 V) GaN Schottky rectifiers

Joan M. Redwing, T. C. McGill, Zvonimir Z. Bandic, 1999 .

Structure of the Langevin and impedance-field methods of calculating noise in devices

T. C. McGill, K. K. Thornber, T. C. Mcgill, 1974 .

Equivalence of the Langevin method and the impedance-field method of calculating noise in devices

T. C. McGill, K. K. Thornber, T. C. Mcgill, 1974 .

Macroscopic and microscopic studies of electrical properties of very thin silicon dioxide subject to electrical stress

T. C. McGill, O. J. Marsh, E. S. Daniel, 1997 .

Advantages of the HgTe‐CdTe superlattice as an infrared detector material

Joel N. Schulman, T. C. McGill, D. L. Smith, 1983 .

Description of bulk inversion asymmetry in the effective-bond-orbital model

David Z. Ting, T. C. McGill, T. C. Mcgill, 2003 .

GaN Schottky diodes for piezoelectric strain sensing

T. C. McGill, T. C. Mcgill, E. Preisler, 2003 .

Infrared optical characterization of InAs/Ga1−xInxSb superlattices

Joel N. Schulman, T. C. McGill, Richard H. Miles, 1990 .

Charge transfer in overlapping gate charge-coupled devices

Carver A. Mead, T. C. McGill, A. M. Mohsen, 1973 .

The CdTe/HgTe superlattice: Proposal for a new infrared material

Joel N. Schulman, T. C. McGill, T. C. Mcgill, 1979 .

The Tunneling Time of an Electron

Carver A. Mead, T. C. McGill, K. K. Thornber, 1967 .

Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode

David Z. Ting, T. C. McGill, William R. Frensley, 2000 .

Charge transfer in charge-coupled devices

Carver A. Mead, T. C. McGill, A. M. Mohsen, 1972 .

Minority carrier diffusion length and lifetime in GaN

T. C. McGill, Zvonimir Z. Bandic, E. C. Piquette, 1998 .

Carrier lifetimes in ion‐damaged GaAs

Mark Johnson, T. C. McGill, N. G. Paulter, 1989 .

Effect of cylindrical geometry on the wet thermal oxidation of AlAs

T. C. McGill, A. C. Alonzo, X.-C. Cheng, 1998 .

High-frequency resonant-tunneling oscillators

T. C. McGill, C. D. Parker, Elliott R. Brown, 1991 .

Electron tunneling time measured by photoluminescence excitation correlation spectroscopy

M. K. Jackson, Mark Johnson, T. C. McGill, 1989 .

Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes

T. C. McGill, C. D. Parker, Elliott R. Brown, 1991 .

Strain relaxation kinetics in Si1–xGex/Si heterostructures

Bruce M. Clemens, T. C. McGill, Edward T. Croke, 1989 .

Ideal CdTe/HgTe superlattices

Joel N. Schulman, T. C. McGill, 1979 .

Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy

T. C. McGill, Zvonimir Z. Bandic, E. C. Piquette, 1999 .

Contact‐Limited Currents in Metal‐Insulator‐Metal Structures

Carver A. Mead, T. C. McGill, L. Fishbone, 1970 .

Platinum diffusion into silicon from PtSi

T. C. McGill, T. C. Mcgill, M. Nicolet, 1983 .

Tunneling and propagating transport in GaAs–Ga1−xAlxAs–GaAs(100) double heterojunctions

T. C. McGill, J. N. Schulman, C. Mailhiot, 1983 .

New negative differential resistance device based on resonant interband tunneling

T. C. McGill, D. H. Chow, T. C. Mcgill, 1989 .

Growth and characterization of InAs/Ga1−xInxSb strained‐layer superlattices

T. C. McGill, Richard H. Miles, D. H. Chow, 1990 .

Type II superlattices for infrared detectors and devices

Joel N. Schulman, T. C. McGill, David H. Chow, 1991 .

Electronic properties of the AlAs-GaAs (001) interface and superlattice

Joel N. Schulman, T. C. McGill, T. C. Mcgill, 1979 .

Reflection high energy electron diffraction study of nitrogen plasma interactions with a GaAs (100) surface

T. C. McGill, D. A. Collins, T. C. Mcgill, 1995 .

Large peak current densities in novel resonant interband tunneling heterostructures

David Z. Ting, T. C. McGill, Edward T. Yu, 1990 .

Negative differential resistance due to resonant interband tunneling of holes

David Z. Ting, T. C. McGill, Edward T. Yu, 1990 .