G. P. Burns

Low‐temperature native oxide removal from silicon using nitrogen trifluoride prior to low‐temperature silicon epitaxy

G. P. Burns, 1988 .

Titanium dioxide dielectric films formed by rapid thermal oxidation

G. P. Burns, 1989 .

Applications of rapid thermal processing to silicon epitaxy

G. P. Burns, J. Wilkes, 1988 .