I. McGillivray

发表

EFFECTS OF PROCESS CHEMICAL PURITY ON MOS CAPACITOR ELECTRICAL PARAMETERS.

Anthony J. Walton, A. Walton, J. M. Robertson, 1986 .

Improved measurements of doping profiles in silicon using CV techniques

Anthony J. Walton, A. Walton, J. M. Robertson, 1988 .

Measurement of electrical parameters and trace impurity effects in MOS capacitors

Ian Grant McGillivray, I. McGillivray, 1987 .