Eugene A. Irene

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Defining and Analysing the Optical Properties of Materials at the Nanoscale: A Collection of Thoughts, Opinions, Ideas and Data that Have Matured Over Years on Exploiting Ellipsometry for a Range of Characterisation Needs

Tatiana Novikova, Herbert Wormeester, Maria Losurdo, 2010 .

Observation of nonlinear reflectivity from InSb surface and optical switching application

Richard C. Jarnagin, Eugene A. Irene, Raymond E. Thomas, 1990, Photonics West - Lasers and Applications in Science and Engineering.

Thermal‐optical switching of a silicon based interference filter

Eugene A. Irene, Brian H. Augustine, E. Irene, 1994 .

A Viscous Flow Model to Explain the Appearance of High Density Thermal SiO2 at Low Oxidation Temperatures

Eugene A. Irene, J. Angilello, E. Irene, 1982 .

Anomalous oxidation rate of silicon implanted with very high doses of arsenic

Seong Soo Choi, Eugene A. Irene, Wei-Kan Chu, 1987 .

Handbook of Ellipsometry

Eugene A. Irene, Harland G. Tompkins, E. Irene, 2005 .

Evidence for a parallel path oxidation mechanism at the Si‐SiO2 interface

Eugene A. Irene, E. Irene, 1982 .

Silicon Oxidation Studies: Some Aspects of the Initial Oxidation Regime

Eugene A. Irene, E. Irene, 1978 .

Limiting Si/SiO2 interface roughness resulting from thermal oxidation

Eugene A. Irene, E. Irene, L. Lai, 1999 .

CRYSTAL GROWTH AND TRANSPORT RATES OF GeSe AND GeTe IN MICRO-GRAVITY ENVIRONMENT†

Eugene A. Irene, F. Klaessig, H. Wiedemeier, 1975 .

In situ stress measurements during thermal oxidation of silicon

Eugene A. Irene, E. Irene, E. Kobeda, 1989 .

In situ study of interface reactions of ion beam sputter deposited (Ba0.5Sr0.5)TiO3 films on Si, SiO2, and Ir

Orlando Auciello, Eugene A. Irene, Alan R. Krauss, 1999 .

Effects of oxygen doping on properties of microcrystalline silicon film grown using rapid thermal chemical vapor deposition

Veena Misra, Mehmet C. Öztürk, Eugene A. Irene, 1993 .

Thermal oxidation of silicon in dry oxygen growth-rate enhancement in the thin regime. I: Experimental results

James D. Plummer, Hisham Z. Massoud, Eugene A. Irene, 1985 .

Thickness and effective electron mass measurements for thin silicon dioxide films using tunneling current oscillations

Eugene A. Irene, R. T. Kuehn, S. Zafar, 1995 .

Oxidation of silicide thin films: TiSi2

Eugene A. Irene, F. d'Heurle, C. Ting, 1983 .

The Influence of Silicon Surface Cleaning Procedures on Silicon Oxidation

Eugene A. Irene, E. Irene, G Gould, 1987 .

Imaging and modification of Au(111) monatomic steps with atomic force microscopy

Eugene A. Irene, Royce W. Murray, Charles A. Goss, 1993 .

An evaluation of errors in determining the refractive index and thickness of thin SiO2 films using a rotating analyzer ellipsometer

Eugene A. Irene, S. Y. Kim, 1995 .

In Situ Ellipsometry in Microelectronics

Eugene A. Irene, J. Woollam, E. Irene, 1995 .

Visible light emission from thin films containing Si, O, N, and H

Eugene A. Irene, Laurie E. McNeil, Brian H. Augustine, 1995 .

Models for the oxidation of silicon

Eugene A. Irene, E. Irene, E. A. Lewis, 1986 .

Thermal Oxidation of Silicon in Dry Oxygen: Growth‐Rate Enhancement in the Thin Regime II . Physical Mechanisms

James D. Plummer, Hisham Z. Massoud, Eugene A. Irene, 1985 .

Electronic Properties of Materials

Eugene A. Irene, E. Irene, 2005 .

Electron trapping in SiO2 at 295 and 77 °K

Hisham Z. Massoud, Eugene A. Irene, D. R. Young, 1979 .

Area evaluation of microscopically rough surfaces

Eugene A. Irene, L. Lai, 1999 .

Thermal oxidation of silicon in dry oxygen

James D. Plummer, Hisham Z. Massoud, Eugene A. Irene, 1983 .