K. Furukawa

Study of Si-wafer directly bonded interface effect on power device characteristics

H. Ohashi, A. Nakagawa, K. Furukawa, 1987, 1987 International Electron Devices Meeting.

Applications of the silicon wafer direct-bonding technique to electron devices

A. Nakagawa, K. Furukawa, A. Nakagawa, 1990 .

500V three phase inverter ICs based on a new dielectric isolation technique

Akio Nakagawa, T. Ogura, K. Watanabe, 1992, Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics.

1800V bipolar-mode MOSFETs: A first application of silicon wafer direct bonding (SDB) technique to a power device

H. Ohashi, A. Nakagawa, K. Watanabe, 1986, 1986 International Electron Devices Meeting.

SOI device structures implementing 650 V high voltage output devices on VLSIs

Akio Nakagawa, N. Yasuhara, K. Furukawa, 1991, International Electron Devices Meeting 1991 [Technical Digest].