A. Nishikawa

发表

Effects of thermal annealing on GaInNAs QDs grown on GaAs [001]

Y. G. Hong, C. Tu, A. Nishikawa, 2003, 2003 International Symposium on Compound Semiconductors.

200-mm GaN-on-Si Based Blue Light-Emitting Diode Wafer with High Emission Uniformity

S. Lutgen, A. Nishikawa, L. Groh, 2013 .

Patterned surface as a template for DNA-based nanotechnology

H. Iwasaki, T. Yoshinobu, A. Nishikawa, 2003, The 2003 Congress on Evolutionary Computation, 2003. CEC '03..

Electroluminescence properties of Eu‐doped GaN‐based red light‐emitting diode by OMVPE

Y. Fujiwara, Y. Terai, A. Nishikawa, 2010 .

High breakdown voltage with low on-state resistance of p-InGaN∕n-GaN vertical conducting diodes on n-GaN substrates

K. Kumakura, T. Makimōto, A. Nishikawa, 2006 .

Low on‐resistance of GaN p‐i‐n vertical conducting diodes grown on 4H‐SiC substrates

K. Kumakura, T. Makimōto, A. Nishikawa, 2007 .

MBE growth and photoreflectance study of GaAsN alloy films grown on GaAs [001]

K. Onabe, R. Katayama, A. Nishikawa, 2002 .

RF-MBE growth of InAsN layers on GaAs (001) substrates using a thick InAs buffer layer

K. Onabe, R. Katayama, A. Nishikawa, 2002, International Conference on Molecular Bean Epitaxy.

MBE growth and photoreflectance study of GaAsN alloy films grown on GaAs [001]

K. Onabe, R. Katayama, A. Nishikawa, 2003, International Conference on Molecular Bean Epitaxy.

Y. G. Hong, C. Tu, A. Nishikawa, 2004 .

Current-voltage characteristics of p‐InGaN∕n‐GaN vertical conducting diodes on n+‐SiC substrates

K. Kumakura, T. Makimōto, T. Akasaka, 2005 .

25‐1: Invited Paper: Achieving high uniformity and yield of 200 mm GaN‐on‐Si LED epiwafers for micro LED applications with precise strain‐engineering

A. Nishikawa, A. Loesing, B. Slischka, 2019, SID Symposium Digest of Technical Papers.

55.1: Invited Paper: Achieving high uniformity of 200 mm GaN‐on‐Si LED epiwafers for micro LED applications

A. Nishikawa, A. Loesing, B. Slischka, 2019, SID Symposium Digest of Technical Papers.

p-InGaN/n-GaN Vertical Conducting Diodes on n+-SiC Substrate for High Power Electronic Device Applications

K. Kumakura, T. Makimōto, T. Akasaka, 2005 .

Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection

Y. Fujiwara, Y. Terai, A. Nishikawa, 2009 .

Atmospheric pressure growth of Eu‐doped GaN by organometallic vapor phase epitaxy

Y. Fujiwara, Y. Terai, A. Nishikawa, 2011 .

Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy

Y. Fujiwara, Y. Terai, A. Nishikawa, 2010 .

Electronic structure and metal-nonmetal transition in liquid Cs−Sb and Cs−I systems

K. Niizeki, A. Nishikawa, 1990 .

The APW Band Calculation of Cs3Sb

Hiroshi Tanaka, K. Niizeki, A. Nishikawa, 1985 .

Patteming of biomolecules on silicon by AFM oxidation

H. Iwasaki, T. Yoshinobu, A. Nishikawa, 2004, Digest of Papers. 2004 International Microprocesses and Nanotechnology Conference, 2004..

Temperature dependence of optical properties of Ga0.3In0.7NxAs1-x quantum dots grown on GaAs (001)

Y. G. Hong, C. Tu, A. Nishikawa, 2004 .

The Equation of State of Xenon under High Pressure

A. Nishikawa, K. Shindō, 1991 .

Highly Uniform Electroluminescence from 150 and 200 mm GaN-on-Si-Based Blue Light-Emitting Diode Wafers

S. Lutgen, A. Chitnis, W. Tan, 2013 .

Excess resistivity due to Sb impurities in Cs metal

K. Niizeki, A. Nishikawa, 1988 .

Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy

M. Boćkowski, E. Alves, I. Roqan, 2010 .

Effect of growth temperature on Eu-doped GaN layers grown by organometallic vapor phase epitaxy

Y. Fujiwara, Y. Terai, A. Nishikawa, 2010 .

The relativistic KKR-EMA densities of states of liquid heavy polyvalent metals

K. Niizeki, A. Nishikawa, 1984 .

Development of a neural probe integrated with high-efficiency MicroLEDs for in vivo application

H. Sekiguchi, A. Nishikawa, A. Loesing, 2020, Japanese Journal of Applied Physics.

Growth and characterization of InAsN alloy films and quantum wells

K. Onabe, R. Katayama, M. Kuroda, 2005 .

Structural Stability of the Group-VIb Elements under High Pressure

K. Ohno, K. Niizeki, A. Nishikawa, 1996 .

Band structure and structural stability of the high-pressure phases of the group VIb elements

K. Ohno, K. Niizeki, A. Nishikawa, 1995 .

Structural Phase Transitions and Equations of State of Se and Te under High Pressure

K. Niizeki, A. Nishikawa, K. Shindō, 1993 .

Electronic structure of sulfur under high pressure

A. Nishikawa, 2008 .

The Structural and Electronic Properties of Sulfur under High Pressure

K. Niizeki, A. Nishikawa, K. Shindō, 1999 .

Growth and optical characterization of InAsN quantum dots

K. Onabe, A. Nishikawa, R. Katayama, 2006 .

Electronic structure of tellurium under high pressure

A. Nishikawa, K. Shindō, 2003 .

High breakdown field of pnp GaN/InGaN/AlGaN DHBTs with AlGaN collector

K. Kumakura, T. Makimōto, A. Nishikawa, 2007 .

Site and sample dependent electron–phonon coupling of Eu ions in epitaxial-grown GaN layers

V. Dierolf, Y. Fujiwara, A. Nishikawa, 2011 .

Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy

Y. Fujiwara, Y. Terai, A. Nishikawa, 2011 .

In situ Eu doping into AlxGa1−xN grown by organometallic vapor phase epitaxy to improve luminescence properties

A. Koizumi, Y. Fujiwara, T. Honma, 2015 .

Electroluminescence Properties of Eu-doped GaN-based Light-emitting Diodes Grown by Organometallic Vapor Phase Epitaxy

Y. Fujiwara, Y. Terai, A. Nishikawa, 2011 .

Growth Temperature Dependence of Eu-Doped GaN Grown by Organometallic Vapor Phase Epitaxy

Y. Fujiwara, Y. Terai, A. Nishikawa, 2010 .

Excitation of Eu3+ in gallium nitride epitaxial layers: Majority versus trap defect center

V. Dierolf, J. Poplawsky, Y. Fujiwara, 2011 .

Eu luminescence center created by Mg codoping in Eu-doped GaN

Y. Fujiwara, Y. Terai, A. Nishikawa, 2012 .

Defect roles in the excitation of Eu ions in Eu:GaN.

V. Dierolf, J. Poplawsky, Y. Fujiwara, 2013, Optics express.

Nature and excitation mechanism of the emission-dominating minority Eu-center in GaN grown by organometallic vapor-phase epitaxy

V. Dierolf, J. Poplawsky, Y. Fujiwara, 2011 .

Site Selective Magneto-Optical Studies of Eu ions in Gallium Nitride

V. Dierolf, Y. Fujiwara, A. Nishikawa, 2011 .

High Critical Electric Field Exceeding 8 MV/cm Measured Using an AlGaN p–i–n Vertical Conducting Diode on n-SiC Substrate

K. Kumakura, T. Makimōto, A. Nishikawa, 2006 .

High critical electric field of AlxGa1-xN p-i-n vertical conducting diodes on n-SiC substrates

Toshiki Makimoto, Atsushi Nishikawa, Tetsuya Akasaka, 2006 .

Low-temperature characteristics of the current gain of GaN/InGaN double-heterojunction bipolar transistors

M. Kasu, K. Kumakura, A. Nishikawa, 2009 .

Electronic Structure of Phosphorus under High Pressure

K. Niizeki, A. Nishikawa, K. Shindō, 2001 .

Low-resistance graded AlxGa1- xN buffer layers for vertical conducting devices on n-SiC substrates

K. Kumakura, T. Akasaka, A. Nishikawa, 2007 .

Investigation of optical gain in Eu-doped GaN thin film grown by OMVPE method

T. Gregorkiewicz, Y. Fujiwara, A. Nishikawa, 2016 .

Development of new-type 1.5 μm light-emitting devices based on Er,O-codoped GaAs

Y. Fujiwara, Y. Terai, A. Nishikawa, 2009 .

Dislocation generation in GaN by dicing process

Y. Fujiwara, H. Taguchi, A. Nishikawa, 2013 .

Pressure Dependence of Energy Gap in CsI Crystal

A. Nishikawa, K. Shindō, 1985 .