X. Li

发表

Low-Frequency Noise Measurements of AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With HfAlO Gate Dielectric

H. Morkoç, V. Misra, C. Zhu, 2010, IEEE Electron Device Letters.

Resonant tunneling in AlSb‐GaSb‐AlSb and AlSb‐InGaSb‐AlSb double barrier heterostructures

W. I. Wang, J. Jimenez, J. L. Jimenez, 1994 .

Multiple subband transitions and evidence for population inversion in InAs/In(As,Sb) heterostructures

H. R. Hardaway, C. Phillips, J. Heber, 2002 .

InGaN based light emitting diodes with Ga doped ZnO as transparent conducting oxide

H. Morkoç, V. Avrutin, N. Izyumskaya, 2010 .

MBE growth of mid-infrared antimonide LEDs with strained electron barriers

C. Phillips, J. Heber, D. Gevaux, 2001 .

Planar-doped n-type InAlAs/InGaAs MODFETs on InP

W.I. Wang, A. Cho, D. Sivco, 1993, IEEE Electron Device Letters.

Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates

H. Morkoc, A. Crespo, M. Tapajna, 2012, IEEE Electron Device Letters.

Observation of Photoinduced Terahertz Gain in GaAs Quantum Wells: Evidence for Radiative Two-Exciton-to-Biexciton Scattering.

M. Manfra, J. Kono, I. Katayama, 2020, Physical review letters.

On the quantum efficiency of InGaN light emitting diodes: Effects of active layer design, electron cooler, and electron blocking layer

H. Morkoç, F. Zhang, V. Avrutin, 2011 .

On carrier spillover in c- and m-plane InGaN light-emitting diodes

Hadis Morkoç, Xianfeng Ni, Keith R. Evans, 2010, OPTO.

Internal quantum efficiency of m-plane InGaN on Si and GaN

Hadis Morkoç, Xianfeng Ni, Ryoko Shimada, 2010, OPTO.

Non-polar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition

Hadis Morkoç, Xianfeng Ni, Xiang Li, 2010, OPTO.

Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes

Hadis Morkoç, Xianfeng Ni, Keith R. Evans, 2009, OPTO.

Amphoteric doping of Si in InAlAs/InGaAs/InP(311)A heterostructures grown by molecular‐beam epitaxy

W. I. Wang, A. Cho, D. Sivco, 1993 .

Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates

H. Morkoc, A. Crespo, T. Paskova, 2012, IEEE Electron Device Letters.

Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures

Xing Li, Hadis Morkoç, Xianfeng Ni, 2010 .

Observation of piezoelectric field induced carriers in AlGaAs/InGaAs strained‐layer heterostructures

W. I. Wang, X. Li, K. Longenbach, 1992 .