W. Cheng

Different mechanism to explain the 1∕f noise in n- and p-SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers

Tadahiro Ohmi, Akinobu Teramoto, Weitao Cheng, 2009 .

Relation Between the Mobility, $\hbox{1}/f$ Noise, and Channel Direction in MOSFETs Fabricated on (100) and (110) Silicon-Oriented Wafers

Tadahiro Ohmi, Akinobu Teramoto, Weitao Cheng, 2010, IEEE Transactions on Electron Devices.

Ultralow-contact-resistance graphene field-effect transistors fabricated with P-type solution doping

M. Ho, C. Hung, Chih‐I Wu, 2018, Applied Physics Express.

High Performance and Highly Reliable Novel CMOS Devices Using Accumulation Mode Fully Depleted SOI MOSFETs

Tadahiro Ohmi, Rihito Kuroda, Akinobu Teramoto, 2006 .

Impact of Improved High-Performance Si(110)-Oriented Metal–Oxide–Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully Depleted Silicon-on-Insulator Devices

Tadahiro Ohmi, Shigetoshi Sugawa, Akinobu Teramoto, 2006 .

Reliability of silicon nitride gate dielectrics grown at 400 °C formed by microwave-excited high-density plasma

T. Ohmi, S. Sugawa, A. Teramoto, 2003 .

Very High Performance CMOS on Si(551) Using Radical Oxidation Technology and Accumulation-Mode SOI Device Structure

T. Ohmi, A. Teramoto, W. Cheng, 2010 .