H. Liao

Degradation of High-Frequency Noise in nMOSFETs Under Different Modes of Hot-Carrier Stress

Hong Wang, Hang Hu, Hao Su, 2012, IEEE Transactions on Electron Devices.

High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET

D. Ang, C. Ling, D.S. Ang, 2003, IEEE Electron Device Letters.

Evidence for a composite interface State generation mode in the CHE-stressed deep-submicrometer n-MOSFET

D. Ang, C. Ling, H. Liao, 2004, IEEE Transactions on Electron Devices.

A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: device characterization and damage assessment

D. Ang, C. Ling, H. Liao, 2002 .