U. Magnusson

The kink-related excess low-frequency noise in silicon-on-insulator MOST's

Eddy Simoen, Antonio Rotondaro, E. Simoen, 1994 .

Low-frequency noise and DC characterization of ionization damage in a 1-/spl mu/m SOI CMOS technology adapted for space applications

J. Colinge, E. Simoen, C. Claeys, 1993, RADECS 93. Second European Conference on Radiation and its Effects on Components and Systems (Cat. No.93TH0616-3).

Investigations of evaporated silicon p‐n junctions and their application to junction field‐effect transistors

H. Norde, S. Berg, A. Söderbärg, 1990 .

A position sensitive LSI detector for low energy (ESCA) electrons

K. Bohlin, J. Tirén, P. Tove, 1986 .

Subthreshold behaviour of silicon MESFETs on SOS and bulk silicon substrates

H Bleichner, Herman Norde, U Magnusson, 1989 .

Complementary Si MESFET concept using silicon-on-sapphire technology

H. Norde, K. Bohlin, J. Tirén, 1988, IEEE Electron Device Letters.

Combined low-frequency noise and random telegraph signal analysis of silicon MOSFET's

Cor Claeys, Eddy Simoen, E. Simoen, 1993 .

Simple method for the determination of the interface trap density at 77 K in fully depleted accumulation mode SOI MOSFETs

Eddy Simoen, C. Claeys, Joao Antonio Martino, 1993 .

Back-gate induced random telegraph signal noise in fully-depleted silicon-on-insulator nMOSFETs

E. Simoen, C. Claeys, J. Vermeiren, 1993 .