P. Kung

发表

Thermal stability of GaN thin films grown on (0001) Al2O3, (011̄2) Al2O3 and (0001)Si 6H‐SiC substrates

Manijeh Razeghi, Adam W. Saxler, E. Bigan, 1994 .

320×256 solar-blind focal plane arrays based on AlxGa1−xN

Manijeh Razeghi, Alireza Yasan, Ryan P McClintock, 2005 .

AlxGa1-xN-Based Materials and Heterostructures

Manijeh Razeghi, Adam W. Saxler, Danielle Walker, 1996 .

Materials characterization of n - ZnO / p - GaN : Mg / c - Al2O3 UV LEDs grown by pulsed laser deposition and metal–organic chemical vapor deposition

Manijeh Razeghi, D. J. Rogers, Ferechteh H. Teherani, 2007 .

Characteristics of high-quality p-type AlxGa1−xN/GaN superlattices

Manijeh Razeghi, Alireza Yasan, Shaban Ramezani Darvish, 2002 .

A crystallographic model of (00⋅1) aluminum nitride epitaxial thin film growth on (00⋅1) sapphire substrate

Manijeh Razeghi, Adam W. Saxler, H. Ohsato, 1994 .

Photoluminescence Study of GaN

Manijeh Razeghi, Adam W. Saxler, Danielle Walker, 1995 .

Electroluminescence at 375nm from a ZnO∕GaN:Mg∕c-Al2O3 heterojunction light emitting diode

Manijeh Razeghi, Alireza Yasan, F. Hosseini Teherani, 2006 .

AlxGa1−xN (0⩽x⩽1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition

Manijeh Razeghi, Adam W. Saxler, Danielle Walker, 1997 .