Ayayi C. Ahyi

High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping

Michael C. Hamilton, Leonard C. Feldman, Aaron Modic, 2014, IEEE Electron Device Letters.

Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs

Anant K. Agarwal, S. Dhar, A. Agarwal, 2012 .

The Limits of Post Oxidation Annealing in NO

Leonard C. Feldman, John Rozen, L. Feldman, 2010 .

Channel Mobility Improvement in 4H-SiC MOSFETs Using a Combination of Surface Counter-Doping and NO Annealing

Leonard C. Feldman, Aaron Modic, Yongju Zheng, 2015 .