R. Togashi

发表

Investigation of halide vapor phase epitaxy of In2O3 on sapphire (0 0 0 1) substrates

Y. Kumagai, B. Monemar, K. Goto, 2021, Journal of Crystal Growth.

Photonic band characterization in InGaN/GaN nanocolumn arrays with triangular and honeycomb lattices by angle-resolved micro-photoluminescence measurements

K. Kishino, R. Togashi, T. Oto, 2021 .

Tri-halide vapor phase epitaxy of thick GaN using gaseous GaCl 3 precursor

Y. Kumagai, A. Koukitu, H. Murakami, 2016 .

High rate InN growth by two-step precursor generation hydride vapor phase epitaxy

Y. Kumagai, A. Koukitu, B. Monemar, 2015 .

Influence of high-temperature processing on the surface properties of bulk AlN substrates

Toru Nagashima, Y. Kumagai, A. Koukitu, 2016 .

Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy

S. Yamakoshi, Y. Kumagai, A. Koukitu, 2014 .

Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy

S. Yamakoshi, Y. Kumagai, A. Koukitu, 2016 .

High rate growth of In2O3 at 1000 °C by halide vapor phase epitaxy

S. Yamakoshi, Y. Kumagai, P. Paskov, 2016 .

Two-Step Growth of (0001) ZnO Single-Crystal Layers on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy

Y. Kumagai, A. Koukitu, H. Murakami, 2011 .

Influence of substrate polarity of (0 0 0 1) and (0 0 0 1¯)GaN surfaces on hydride vapor-phase epitaxy of InN

Y. Kumagai, A. Koukitu, H. Murakami, 2010 .

High-Temperature Heat-Treatment of c-, a-, r-, and m-Plane Sapphire Substrates in Mixed Gases of H2 and N2

Y. Kumagai, A. Koukitu, H. Murakami, 2013 .

Influence of hydrogen coverage on Si(1 1 1) substrate on the growth of GaN buffer layer

A. Koukitu, Y. Kangawa, K. Kakimoto, 2007 .

Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates

Toru Nagashima, M. Harada, H. Yanagi, 2012 .

Ga2O3 field-plated schottky barrier diodes with a breakdown voltage of over 1 kV

S. Yamakoshi, Y. Kumagai, B. Monemar, 2016, 2016 74th Annual Device Research Conference (DRC).

Ga2O3 Schottky barrier diodes with n−-Ga2O3 drift layers grown by HVPE

S. Yamakoshi, Y. Kumagai, A. Koukitu, 2015, 2015 73rd Annual Device Research Conference (DRC).

Investigation of etching characteristics of HVPE-grown c-In2O3 layers by hydrogen-environment anisotropic thermal etching

Y. Kumagai, K. Goto, A. Kikuchi, 2021, Journal of Crystal Growth.

Formation mechanism of AlN whiskers on sapphire surfaces heat-treated in a mixed flow of H2 and N2

Y. Kumagai, A. Koukitu, K. Takada, 2016 .

Thermal and chemical stabilities of group-III sesquioxides in a flow of either N2 or H2

S. Yamakoshi, Y. Kumagai, A. Koukitu, 2016 .

Comparison of O2 and H2O as oxygen source for homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy

S. Yamakoshi, Y. Kumagai, B. Monemar, 2018, Journal of Crystal Growth.

Thermal stability of β-Ga2O3 in mixed flows of H2 and N2

S. Yamakoshi, Y. Kumagai, A. Koukitu, 2015 .

Theoretical Analysis for Surface Reconstruction of AlN and InN in the Presence of Hydrogen

Y. Kumagai, A. Koukitu, H. Murakami, 2007 .

Ab initio calculation for the decomposition process of GaN (0 0 0 1) and (0 0 0 1¯) surfaces

Y. Kumagai, A. Koukitu, H. Murakami, 2008 .

Investigation of polarity dependent InN{0001} decomposition in N2 and H2 ambient

Y. Kumagai, A. Koukitu, H. Murakami, 2009 .

Polarity dependence of AlN {0001} decomposition in flowing H2

Toru Kinoshita, Yoshinao Kumagai, Hisashi Murakami, 2007 .

Electronic properties of the residual donor in unintentionally doped beta-Ga2O3

E. Janzén, N. T. Son, S. Yamakoshi, 2016 .

Formation of AlN on sapphire surfaces by high-temperature heating in a mixed flow of H2 and N2

Y. Kumagai, A. Koukitu, K. Takada, 2012 .

Growth of thin protective AlN layers on sapphire substrates at 1065 °C for hydride vapor phase epitaxy of AlN above 1300 °C

Y. Kumagai, A. Koukitu, Y. Kubota, 2008 .

Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals

S. Yamakoshi, Y. Kumagai, M. Schubert, 2015, 1512.08590.

Effects of substrate nitridation and buffer layer on the crystalline improvements of semi-polar InN(101¯3) crystal on GaAs(110) by MOVPE

Y. Kumagai, A. Koukitu, H. Murakami, 2013 .

Comparison of surface plasmon polariton characteristics of Ag- and Au-based InGaN/GaN nanocolumn plasmonic crystals

K. Kishino, K. Okamoto, R. Togashi, 2021, Applied Physics Express.

Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxy

Akito Kuramata, Shigenobu Yamakoshi, Yoshinao Kumagai, 2014 .

Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy

Toru Nagashima, Y. Kumagai, A. Koukitu, 2015 .

Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy

Y. Kumagai, A. Koukitu, H. Murakami, 2010 .

Effect of High NH3 Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates

Y. Kumagai, A. Koukitu, P. Holtz, 2013 .

Study of the Decomposition Processes of (0001)AlN in a Hydrogen Atmosphere

Y. Kumagai, A. Koukitu, H. Murakami, 2007 .

Current Status of Gallium Oxide-Based Power Device Technology

S. Yamakoshi, Y. Kumagai, A. Koukitu, 2015, 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Growth of semi-polar InN layer on GaAs (1 1 0) surface by MOVPE

Y. Kumagai, A. Koukitu, H. Murakami, 2011 .