Y. Koshka

发表

Surface Morphology Improvement and Repeatable Doping Characterization of 4H-SiC Epitaxy Grown on 4° Off-Axis 4H-SiC Wafers

Janna R. B. Casady, J. Casady, S. Sunkari, 2009 .

Structure, paramagnetic defects and light-emission of carbon-rich a-SiC:H films

V. Lysenko, A. Nazarov, Y. Ishikawa, 2008 .

Two- and three-dimensional simulation of chemical vapor deposition SiC epitaxial growth processes

M. Mazzola, G. Melnychuk, Y. Koshka, 2003 .

EPR study of carbon and silicon related defects in carbon-rich hydrogenated amorphous silicon-carbon films

Yaroslav Koshka, V. S. Lysenko, V. Lysenko, 2010 .

High-frequency electron paramagnetic resonance study of the as deposited and annealed carbon-rich hydrogenated amorphous silicon-carbon films

V. Lysenko, D. Savchenko, A. Nazarov, 2008 .

Differences between chloro‐carbon and hydro‐carbon precursors in low‐temperature epitaxial growth of 4H‐SiC

Siva Kotamraju, Y. Koshka, B. Krishnan, 2010 .

Enhanced hydrogenation in polycrystalline Si thin films using ultrasound treatment

Ronald K. Smeltzer, Sergei S. Ostapenko, Yaroslav Koshka, 1997, Electronic Imaging.

Room-temperature luminescence diagnostics in polycrystalline silicon

Sergei S. Ostapenko, Yaroslav Koshka, Lubek Jastrzebski, 1997, Advanced Lithography.

Relationships between room temperature photoluminescence and electronic quality in multicrystalline silicon

J. Kalejs, S. Ostapenko, Y. Koshka, 1997, Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997.

Chloride-based CVD growth of silicon carbide for electronic applications.

Yaroslav Koshka, Anne Henry, Shin-ichi Nishizawa, 2012, Chemical reviews.

Role of Cl/Si Ratio in the Low-Temperature Chloro-Carbon Epitaxial Growth of SiC

Siva Kotamraju, G. Melnychuk, Y. Koshka, 2013 .

Vanadium doping using VCl4 source during the chloro-carbon epitaxial growth of 4H-SiC

Siva Kotamraju, Y. Koshka, B. Krishnan, 2011 .

Triangular defects in the low-temperature halo-carbon homoepitaxial growth of 4H-SiC

G. Melnychuk, H. Das, Y. Koshka, 2010 .

Use of SiCl4 as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiC

Siva Kotamraju, G. Melnychuk, Y. Koshka, 2010 .

Epitaxial Growth of 4H-SiC with High Growth Rate Using CH3Cl and SiCl4 Chlorinated Growth Precursors

Siva Kotamraju, Y. Koshka, B. Krishnan, 2010 .

Generation of Defects in Heavily Al-Doped 4H-SiC Epitaxial Layers Grown by the Low-Temperature Halo-Carbon Method

Siva Kotamraju, H. Das, Y. Koshka, 2010 .

Low-temperature homoepitaxial growth of 4H-SiC with CH3Cl and SiCl4 precursors

Siva Kotamraju, G. Melnychuk, Y. Koshka, 2010 .

Heavily Aluminum-Doped Epitaxial Layers for Ohmic Contact Formation to p-Type 4H-SiC Produced by Low-Temperature Homoepitaxial Growth

Siva Kotamraju, G. Melnychuk, J. N. Merrett, 2010 .

Use of chlorinated carbon and silicon precursors for epitaxial growth of 4H‐SiC at very high growth rates

Siva Kotamraju, Y. Koshka, B. Krishnan, 2009 .

Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth

G. Melnychuk, H. Das, Y. Koshka, 2009 .

Aluminum Doping by Low-Temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-Type 4H-SiC

Siva Kotamraju, G. Melnychuk, Y. Koshka, 2009 .

Low-Temperature Homoepitaxial Growth with SiCl4 Precursor Compared to HCl Assisted SiH4-Based Growth

Siva Kotamraju, G. Melnychuk, Y. Koshka, 2009 .

Local-Loading Effect in Low-Temperature Selective Epitaxial Growth of 4H-SiC by Halo-Carbon Method

G. Melnychuk, H. Das, Y. Koshka, 2008 .

Nitrogen Doping in Low-Temperature Halo-Carbon Homoepitaxial Growth of SiC

G. Melnychuk, Y. Koshka, H. Lin, 2008 .

Selective Epitaxial Growth of 4H-SiC with SiO2 Mask by Low-Temperature Halo-Carbon Homoepitaxial Method

H. Das, Y. Koshka, B. Krishnan, 2007 .

Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive

G. Melnychuk, Y. Koshka, H. Lin, 2007 .

Selective epitaxial growth of 4H-SiC at reduced temperatures using halo-carbon precursor

H. Das, Y. Koshka, B. Krishnan, 2006 .

Lower-Temperature Epitaxial Growth of 4H-SiC Using CH3Cl Carbon Gas Precursor

C. Wood, G. Melnychuk, Y. Koshka, 2006 .

Investigation of the Mechanism and Growth Kinetics of Homoepitaxial 4H-SiC Growth Using CH3Cl Carbon Precursor

Y. Koshka, H. Lin, J. Wyatt, 2006 .

Homoepitaxial Growth of 4H-SiC Using CH3Cl Carbon Precursor

M. Mazzola, Y. Koshka, Galyna Melnychuck, 2005 .

Multidisciplinary Undergraduate Nanotechnology Education at Mississippi State University

Yaroslav Koshka, Priscilla J. Hill, Carlen Henington, 2013 .

Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs

Michael S. Mazzola, John D. Cressler, Yaroslav Koshka, 2005 .

Depth Distribution of Lattice Damage-Related DI and DII Defects after Ion Implantation and Annealing of 6H-SiC

Y. Koshka, Galyna Melnychuck, 2002 .

Improved Resolution of Epitaxial Thin Film Doping Using FTIR Reflectance Spectroscopy

Michael S. Mazzola, Yaroslav Koshka, Jie Zhang, 2005 .

Nanoexposed! An introduction to nanotechnology

Yaroslav Koshka, Priscilla J. Hill, Oliver Myers, 2012 .

Assessment of "Normally On" and "Quasi On" SiC VJFET's in Half-Bridge Circuits

Michael S. Mazzola, Yaroslav Koshka, James Gafford, 2004 .

Electroluminescent properties of Tb-doped carbon-enriched silicon oxide

M. Voelskow, A. Nazarov, L. Rebohle, 2014 .

Substrate-Dependent Orientation and Polytype Control in SiC Nanowires Grown on 4H-SiC Substrates

A. Davydov, I. Levin, S. Sundaresan, 2011 .

Silicon carbide nanowires grown on 4H-SiC substrates by chemical vapor deposition

Siva Kotamraju, S. Sundaresan, H. Issa, 2009 .

Selective streptavidin bioconjugation on silicon and silicon carbide nanowires for biosensor applications

M. V. Rao, Amy K. Manocchi, A. Davydov, 2013 .

Comparison of Use of a 2000 Qubit D-Wave Quantum Annealer and MCMC for Sampling, Image Reconstruction, and Classification

Yaroslav Koshka, Mark A. Novotny, M. Novotny, 2021, IEEE Transactions on Emerging Topics in Computational Intelligence.

Comparison of D-Wave Quantum Annealing and Classical Simulated Annealing for Local Minima Determination

Yaroslav Koshka, M. A. Novotny, M. Novotny, 2019, IEEE Journal on Selected Areas in Information Theory.

Toward sampling from undirected probabilistic graphical models using a D-Wave quantum annealer

Yaroslav Koshka, M. A. Novotny, M. Novotny, 2019, Quantum Information Processing.

2000 Qubit D-Wave Quantum Computer Replacing MCMC for RBM Image Reconstruction and Classification

Yaroslav Koshka, M. A. Novotny, M. Novotny, 2018, 2018 International Joint Conference on Neural Networks (IJCNN).

Determination of the Lowest-Energy States for the Model Distribution of Trained Restricted Boltzmann Machines Using a 1000 Qubit D-Wave 2X Quantum Computer

Yaroslav Koshka, M. A. Novotny, Spencer Hall, 2017, Neural Computation.

Optically induced formation of the hydrogen complex responsible for the 4B0 luminescence in 4H-SiC

Y. Koshka, 2003 .

SiC nanowire vapor–liquid–solid growth using vapor-phase catalyst delivery

A. Davydov, J. N. Merrett, Y. Koshka, 2013 .

Growth of SiC Nanowires on Different Planes of 4H-SiC Substrates

A. Davydov, I. Levin, S. Sundaresan, 2012 .

Growth on Differently Oriented Sidewalls of SiC Mesas As a Way of Achieving Well-Aligned SiC Nanowires

A. Davydov, J. N. Merrett, Y. Koshka, 2012 .

Relationship between infrared photoluminescence and resistivity in semi-insulating 6H-SiC

M. Yoganathan, Y. Koshka, S. K. Chanda, 2006 .

Properties of Different Room-Temperature Photoluminescence Bands in 4H-SiC Substrates Investigated by Mapping Techniques

Y. Koshka, B. Krishnan, S. K. Chanda, 2007 .

A Multidisciplinary Undergraduate Nanotechnology Education Program with Integrated Laboratory Experience

Yaroslav Koshka, Priscilla J. Hill, Tonya W. Stone, 2015 .

Effect of HCl addition on gas-phase and surface reactions during homoepitaxial growth of SiC at low temperatures

Siva Kotamraju, G. Melnychuk, Y. Koshka, 2008 .

Epitaxial growth of 4H–SiC at low temperatures using CH3Cl carbon gas precursor: Growth rate, surface morphology, and influence of gas phase nucleation

C. Wood, G. Melnychuk, Y. Koshka, 2006 .

Scanning room-temperature photoluminescence in polycrystalline silicon

J. Kalejs, S. Ostapenko, I. Tarasov, 1999 .

Vanadium doping of 4H SiC from a solid source: Photoluminescence investigation

C. Pittman, Y. Koshka, M. Mazzola, 2001 .

Infrared photoluminescence from Er doped porous Si

W. Henley, J. Siejka, J. Lagowski, 2000 .

Changes in Al-related photoluminescence in 4H-SiC caused by hydrogenation

M. Mazzola, W. Draper, Y. Koshka, 2002 .

Recombination-induced athermal migration of hydrogen and deuterium in SiC

Y. Koshka, B. Krishnan, 2005 .

New Photoluminescence Features in 4H-SiC Induced by Hydrogenation

M. Mazzola, Y. Koshka, J. Wyatt, 2003 .

Hydrogen interaction with defects and impurities in 6H-SiC

J. B. Dufrene, J. Casady, Y. Koshka, 2003 .

Non-metastable recombination induced reactions involving hydrogen in SiC

M. Mazzola, Y. Koshka, B. Krishnan, 2004 .

A Multidisciplinary Undergraduate Nanotechnology Education Program

Yaroslav Koshka, Priscilla J Hill, Priscilla J. Hill, 2013 .

Photoluminescence Investigation of Hydrogen Interaction with Defects in SiC

M. Mazzola, Y. Koshka, 2002 .

Effect of hydrogenation on Al-related photoluminescence in 6H–SiC

M. Mazzola, Y. Koshka, 2001 .

Photoconductivity in porous GaN layers

S. Saddow, V. Evstropov, K. Mynbaev, 2001 .

Use of Vanadium Doping for Compensated and Semi-Insulating SiC Epitaxial Layers for SiC Device Applications

Siva Kotamraju, Y. Koshka, B. Krishnan, 2012 .

Computational Modeling for the Development of CVD SiC Epitaxial Growth Processes

M. Mazzola, C. Pittman, Y. Koshka, 2003 .

Recombination-induced formation of hydrogen–defect complexes in 4H and 6H–SiC: electrical and optical characterization

M. Mazzola, I. Sankin, Y. Koshka, 2003 .

SiC Defect Density Reduction by Epitaxy on Porous Surfaces

W. J. Choyke, S. Saddow, R. Devaty, 2001 .

Spin-On Doping of Porous SiC with Er

S. Saddow, M. Mynbaeva, J. Walker, 2004 .

High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor

Jie Zhang, J. Casady, C. Hoff, 2005 .

A 64 bit quantum dragon data-set for machine learning

M. Novotny, Y. Koshka, Vivek Dixit, 2021, Journal of Physics: Conference Series.

Empirical investigation of the low temperature energy function of the Restricted Boltzmann Machine using a 1000 qubit D-Wave 2X

Yaroslav Koshka, M. A. Novotny, Spencer Hall, 2016, 2016 International Joint Conference on Neural Networks (IJCNN).

Experimental Investigation and Simulation of Silicon Droplets Formation during SiC CVD Epitaxial Growth

M. Mazzola, Y. Koshka, Galyna Melnychuck, 2005 .