Hiroshi Suzuki

Dislocation Revelation from (0001) Carbon-face of 4H-SiC by Using Vaporized KOH at High Temperature

T. Bessho, Y. Sugawara, Y. Ishikawa, 2012 .

Large-Area Mapping of Dislocations in 4H-SiC from Carbon-Face (000-1) by Using Vaporized KOH Etching near 1000 °C

T. Bessho, Y. Sugawara, Y. Ishikawa, 2013 .

Molten KOH Etching with Na2O2 Additive for Dislocation Revelation in 4H-SiC Epilayers and Substrates

Y. Sugawara, Y. Ishikawa, N. Shibata, 2011 .

Dislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching with Na2O2 Additive

Y. Sugawara, Y. Ishikawa, N. Shibata, 2011 .

Characterization of insulated-gate bipolar transistor temperature on insulating, heat-spreading polycrystalline diamond substrate

S. Shikata, T. Bessho, H. Umezawa, 2016 .