Ta-Chun Cho

发表

High-Performance Uniaxial Tensile Strained n-Channel JL SOI FETs and Triangular JL Bulk FinFETs for Nanoscaled Applications

Yao-Jen Lee, F. Hou, P. Sung, 2017, IEEE Transactions on Electron Devices.

Fabrication of Vertically Stacked Nanosheet Junctionless Field-Effect Transistors and Applications for the CMOS and CFET Inverters

Yao-Jen Lee, C. Su, P. Sung, 2020, IEEE Transactions on Electron Devices.

Characterization of Ultra-Thin Ni Silicide Film by Two-Step Low Temperature Microwave Anneal

Yao-Jen Lee, P. Sung, T. Chao, 2014 .

Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review

Yao-Jen Lee, C. Hu, P. Sung, 2014, IEEE Transactions on Electron Devices.

High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO2 laser annealing for 3D stacked ICs applications

G. Huang, Yao-Jen Lee, F. Hou, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Ultra-Shallow Junction Formation by Monolayer Doping Process in Single Crystalline Si and Ge for Future CMOS Devices

P. Sung, K. Kao, T. Tseng, 2017 .

A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing

P. Sung, K. Kao, Y. Lee, 2014, 2014 IEEE International Electron Devices Meeting.

First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications

J. Tarng, Kun-Ming Chen, G. Huang, 2022, IEEE Transactions on Electron Devices.

Characteristics of In0.7Ga0.3As MOS Capacitors with Sulfur and Hydrazine Pretreatments

Yao-Jen Lee, C. Su, T. Chao, 2021, ECS Journal of Solid State Science and Technology.

First Demonstration of heterogenous Complementary FETs utilizing Low-Temperature (200 °C) Hetero-Layers Bonding Technique (LT-HBT)

H. J. Chen, J. Tarng, C. Su, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

3-D Monolithic Stacking of Complementary-FET on CMOS for Next Generation Compute-In-Memory SRAM

C. Su, P. Sung, Wen-Hsi Lee, 2023, IEEE Journal of the Electron Devices Society.

Integration Design and Process of 3-D Heterogeneous 6T SRAM with Double Layer Transferred Ge/2Si CFET and IGZO Pass Gates for 42% Reduced Cell Size

T. Hong, P. Sung, K. Kao, 2022, 2022 International Electron Devices Meeting (IEDM).

Large Memory Window Antifuse HfO₂-Based One-Resistor and One-OTP NVMs Featuring Excellent Disturbance Tolerance and Robust 200 °C Retention

Dong-Ru Hsieh, Ta-Chun Cho, Wei-Ju Yeh, 2024, IEEE Transactions on Electron Devices.

Low-temperature microwave annealing processes for future IC fabrication

Yao-Jen Lee, P. Sung, T. Chao, 2014, 2014 IEEE International Nanoelectronics Conference (INEC).

Microwave Annealing of Phosphorus and Cluster Carbon Implanted (100) and (110) Si

Tien-Sheng Chao, Michael I. Current, Hiroshi Onoda, 2013 .