A. Candelori

发表

Errata to “Identification and Classification of Single-Event Upsets in the Configuration Memory of SRAM-Based FPGAs”

D. Bortolato, M. Ceschia, Massimo Violante, 2003 .

Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact,

A. Candelori, Francesco Iannuzzo, Giovanni Busatto, 2003, Microelectron. Reliab..

APV25 productin testing and quality assurance

A. Candelori, M. Raymond, J. Leaver, 2002 .

Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment

A. Candelori, Francesco Iannuzzo, Giovanni Busatto, 2003, Microelectron. Reliab..

Heavy ion effects on configuration logic of Virtex FPGAs

A. Candelori, Sergio D'Angelo, Giacomo R. Sechi, 2005, 11th IEEE International On-Line Testing Symposium.

Heavy-Ions induced SEE effects measurements for the STRURED ASIC

A. Candelori, G. De Robertis, Alessandro Gabrielli, 2011 .

SEU sensitivity of virtex configuration logic

M. Alderighi, A. Candelori, A. Paccagnella, 2005, IEEE Transactions on Nuclear Science.

Evaluating the effects of SEUs affecting the configuration memory of an SRAM-based FPGA

D. Bortolato, Paolo Bernardi, Alessandro Paccagnella, 2004, Proceedings Design, Automation and Test in Europe Conference and Exhibition.

TID and SEE characterization and damaging analysis of 256 Mbit COTS SDRAM for IEEM application

A. Candelori, S. Bertazzoni, D. Bisello, 2005, 2005 8th European Conference on Radiation and Its Effects on Components and Systems.

Single-event upset tests on the readout electronics for the pixel detectors of the PANDA experiment

A. Candelori, Serena Mattiazzo, I. Balossino, 2014 .

Analyzing SEU effects is SRAM-based FPGAsb

D. Bortolato, Paolo Bernardi, Alessandro Paccagnella, 2003, 9th IEEE On-Line Testing Symposium, 2003. IOLTS 2003..

Anomalous charge loss from floating-gate memory cells due to heavy ions irradiation

A. Candelori, A. Paccagnella, Luca Larcher, 2002 .

Impact of 24-GeV Proton Irradiation on 0.13-$mu$m CMOS Devices

A. Candelori, N. Bacchetta, D. Bisello, 2005, IEEE Transactions on Nuclear Science.

Drain current decrease in MOSFETs after heavy ion irradiation

A. Candelori, G. Ghidini, S. Gerardin, 2004, IEEE Transactions on Nuclear Science.

High Voltage Operation of Heavily Irradiated Silicon Microstrip Detectors

P. Ciampolini, Y. Wang, A. Marchioro, 2007 .

Data retention after heavy ion exposure of floating gate memories: analysis and simulation

A. Candelori, A. Paccagnella, Luca Larcher, 2003 .

Radiation damage of standard and oxygenated silicon diodes irradiated by 16-MeV and 27-MeV protons

A. Candelori, D. Bisello, Devis Pantano, 2001 .

Radiation hardness of silicon detectors for high-energy physics applications

A. Candelori, Maurizio Boscardin, Nicola Zorzi, 2003 .

Low- and high-energy proton irradiations of standard and oxygenated silicon diodes

A. Candelori, N. Bacchetta, D. Bisello, 2001 .

Effect of different total ionizing dose sources on charge loss from programmed floating gate cells

A. Candelori, A. Visconti, A. Paccagnella, 2005, IEEE Transactions on Nuclear Science.

Transient conductive path induced by a Single ion in 10 nm SiO/sub 2/ Layers

A. Candelori, A. Visconti, A. Paccagnella, 2004, IEEE Transactions on Nuclear Science.

The SIRAD irradiation facility for bulk damage and single event effect studies

A. Candelori, D. Bisello, Devis Pantano, 2003, Proceedings of the 7th European Conference on Radiation and Its Effects on Components and Systems, 2003. RADECS 2003..

Radiation-hard semiconductor detectors for SuperLHC

Marina Artuso, Stefano Lagomarsino, Silvio Sciortino, 2005 .

Observation of an energy dependence of the radiation damage on standard and oxygenated silicon diodes by 16, 21, and 27 MeV protons

A. Candelori, D. Bisello, Devis Pantano, 2001 .

Heavy ion irradiation of thin gate oxides

A. Candelori, Gabriella Ghidini, A. Paccagnella, 2000 .