X. Ma 马

发表

High-frequency enhancement-mode millimeterwave AlGaN/GaN HEMT with an f T/f max over 100 GHz/200 GHz

Sheng 盛 Wu 武, Minhan 珉瀚 Mi 宓, X. Ma 马, 2021 .

Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMTs SRAM unit and voltage level shifter using fluorine plasma treatment

X. Ma 马, J. Zhang 张, Y. Chen 陈, 2016 .

Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT D flip-flop using fluorine plasma treatment

X. Ma 马, J. Zhang 张, Y. Hao 郝, 2011 .

Characteristics and analysis of 4H-SiC PiN diodes with a carbon-implanted drift layer

X. Ma 马, X. Liu 刘, C. Li 李, 2016 .

A self-heating study on multi-finger AlGaN/GaN high electron mobility transistors

X. Ma 马, Y. Chen 陈, Y. Hao 郝, 2013 .

Small-signal model parameter extraction for AlGaN/GaN HEMT

X. Ma 马, S. Zhang 张, Le 乐 Yu 余, 2016 .

A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications

X. Ma 马, P. Wang 王, Y. Hao 郝, 2022 .

Effect of SiN:Hx passivation layer on the reverse gate leakage current in GaN HEMTs

Xiao-hua Ma, Sen Huang, Xinyu Liu, 2018, Chinese Physics B.

A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT

X. Ma 马, H. Zhang 张, Y. Hao 郝, 2015 .

Analysis of AlGaN/GaN high electron mobility transistors failure mechanism under semi-on DC stress

X. Ma 马, B. Zhang 张, M. Wang 王, 2014 .

AlGaN/GaN high-electron-mobility transistors with transparent gates by Al-doped ZnO

X. Ma 马, J. Zhang 张, C. Wang 王, 2013 .