Meng Zhang

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017, 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Enhancement-Mode AlGaN/GaN Nanowire Channel High Electron Mobility Transistor With Fluorine Plasma Treatment by ICP

Y. Hao, Xiao-hua Ma, Chong Wang, 2017, IEEE Electron Device Letters.

In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

Y. Hao, Xiao-hua Ma, Minhan Mi, 2020 .

Improved fmax and breakdown voltage in AlGaN/GaN HEMT with plasma treatment

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

Millimeter-Wave Power AlGaN/GaN HEMT Using Surface Plasma Treatment of Access Region

Lin-An Yang, Y. Hao, Xiao-hua Ma, 2017, IEEE Transactions on Electron Devices.

Effect of Inductively Couple Plasma‐Based Oxygen Plasma Treatment on AlGaN/GaN HEMT

Y. Hao, Xiao-hua Ma, Peijun Ma, 2018, physica status solidi (a).

Fully recessed-gate normally-off AlGaN/GaN high electron mobility transistors with high breakdown electric field*

Y. Hao, Xiao-hua Ma, Chong Wang, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

High-Performance Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Combined With TiN-Based Source Contact Ledge and Two-Step Fluorine Treatment

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, IEEE Electron Device Letters.

Influence of thermal annealing on AlGaN/GaN HEMT by fluorine plasma treatment

Y. Hao, Xiao-hua Ma, Chong Wang, 2016, 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Structural and thermal analysis of polycrystalline diamond thin film grown on GaN-on-SiC with an interlayer of 20 nm PECVD-SiN

K. Cheng, Xiao-hua Ma, P. Wang, 2022, Applied Physics Letters.

Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs

Y. Hao, Xiao-hua Ma, Minhan Mi, 2021, IEEE Transactions on Electron Devices.

A Millimeter-Wave AlGaN/GaN HEMT Fabricated With Transitional-Recessed-Gate Technology for High-Gain and High- Linearity Applications

Y. Hao, Xiao-hua Ma, Minhan Mi, 2019, IEEE Electron Device Letters.

Enhanced gm and fT With High Johnson’s Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017, IEEE Electron Device Letters.

High linearity and high power performance with barrier layer of sandwich structure and Al0.05GaN back barrier for X-band application

Y. Hao, Xiao-hua Ma, Minhan Mi, 2020, Journal of Physics D: Applied Physics.

Low-Resistance Ta/Al/Ni/Au Ohmic Contact and Formation Mechanism on AlN/GaN HEMT

Xiao-hua Ma, Bin Hou, Fang Song, 2022, IEEE Transactions on Electron Devices.

A physics‐based threshold voltage model of AlGaN/GaN nanowire channel high electron mobility transistor

Y. Hao, Xiao-hua Ma, Chong Wang, 2017 .

Improving the transconductance flatness of InAlN/GaN HEMT by modulating VT along the gate width

Y. Hao, Xiao-hua Ma, Minhan Mi, 2019, Applied Physics Express.

Direct Observation of Gate Leakage Paths in AlGaN/GaN High Electron Mobility Transistors by Electron Beam–Induced Current

Y. Hao, Xiao-hua Ma, Bin Hou, 2018, IEEE Transactions on Device and Materials Reliability.

Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs

Y. Hao, Xiao-hua Ma, Bin Hou, 2020 .

Temperature‐Dependent Characteristics of AlGaN/GaN Nanowire Channel High Electron Mobility Transistors

Y. Hao, Xiao-hua Ma, Chunfu Zhang, 2019, physica status solidi (a).

The Influence of Fe Doping Tail in Unintentionally Doped GaN Layer on DC and RF Performance of AlGaN/GaN HEMTs

Y. Hao, Xiao-hua Ma, Minhan Mi, 2021, IEEE Transactions on Electron Devices.

Reliability investigation of AlGaN/GaN HEMTs under reverse-bias stress at 77K

Y. Hao, Xiao-hua Ma, Bin Hou, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V fmax·VBK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates

Xiao-hua Ma, Yi Hao, Minhan Mi, 2022, Applied Physics Letters.

The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer

Xiao-hua Ma, Minhan Mi, Bin Hou, 2022, IEEE Transactions on Electron Devices.

930V and Low-Leakage Current GaN-on-Si Quasi-Vertical PiN Diode With Beveled-Sidewall Treated by Self-Aligned Fluorine Plasma

Xiao-hua Ma, Bin Hou, Ling Yang, 2022, IEEE Electron Device Letters.

High RF Performance AlGaN/GaN HEMT Fabricated by Recess-Arrayed Ohmic Contact Technology

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, IEEE Electron Device Letters.

A systematic study of device structure on DC and small‐signal characteristics of millimeter‐wave AlGaN/GaN HEMT

Y. Hao, Xiao-hua Ma, Minhan Mi, 2019, International Journal of Numerical Modelling: Electronic Networks, Devices and Fields.

High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure

Y. Hao, Xiao-hua Ma, Minhan Mi, 2022, Applied Physics Letters.

Improvement of Subthreshold Characteristic of Gate-Recessed AlGaN/GaN Transistors by Using Dual-Gate Structure

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017, IEEE Transactions on Electron Devices.

Influence of Fin-Like Configuration on Small-Signal Performance of AlGaN/GaN HEMTs

Xiao-hua Ma, Minhan Mi, Yang Lu, 2022, IEEE Transactions on Electron Devices.

AlN/GaN/InGaN Coupling-Channel HEMTs for Improved gm and Gain Linearity

Y. Hao, Hao Lu, Xiao-hua Ma, 2021, IEEE Transactions on Electron Devices.

Polarization Engineering in PZT/AlGaN/GaN High-Electron-Mobility Transistors

Y. Hao, Xiao-hua Ma, Bin Hou, 2018, IEEE Transactions on Electron Devices.

Trap analysis of composite 2D–3D channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C multi-heterostructure at different temperatures

Y. Hao, Xiao-hua Ma, Minhan Mi, 2020 .

High Efficiency Over 70% at 3.6-GHz InAlN/GaN HEMT Fabricated by Gate Recess and Oxidation Process for Low-Voltage RF Applications

Xiao-hua Ma, Mei Yang, Minhan Mi, 2023, IEEE Transactions on Electron Devices.

Improved on-state performance of AlGaN/GaN Fin-HEMTs by reducing the length of the nanochannel

Xiao-hua Ma, Minhan Mi, Bin Hou, 2017 .

High VTH and Improved Gate Reliability in P-GaN Gate HEMTs With Oxidation Interlayer

Xiao-hua Ma, Bin Hou, Ling Yang, 2023, IEEE Electron Device Letters.

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

Y. Hao, Xiao-hua Ma, Minhan Mi, 2021, IEEE Journal of the Electron Devices Society.

Enhancement-Mode AlN/GaN Fin-type High Electron Mobility Transistor with Low Knee Voltage

Minhan Mi, Q. Zhu, Meng Zhang, 2022, 2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP).

InAlN/GaN HEMT With n+GaN Contact Ledge Structure for Millimeter-Wave Low Voltage Applications

Xiao-hua Ma, Mei Yang, Minhan Mi, 2023, IEEE Journal of the Electron Devices Society.

A High RF-Performance AlGaN/GaN HEMT With Ultrathin Barrier and Stressor In Situ SiN

Y. Hao, Xiao-hua Ma, Minhan Mi, 2021, IEEE Transactions on Electron Devices.

Integration of polycrystalline diamond heat spreader with AlGaN/GaN HEMTs using a dry/wet combined etching process

Xiao-hua Ma, P. Wang, Bin Hou, 2023, Diamond and Related Materials.