Wei-Wei Chen

发表

Using in-process measurements of open-gate structures to evaluate threshold voltage of normally-off GaN-based high electron mobility transistors

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2015 .

Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height

Y. Hao, Jincheng Zhang, Shenglei Zhao, 2020 .

Method of evaluating interface traps in Al2O3/AlGaN/GaN high electron mobility transistors

Y. Hao, Xiao-hua Ma, Bin Hou, 2019, Chinese Physics B.

0.9-A/mm, 2.6-V Flash-Like Normally-Off Al2O3/AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, IEEE Electron Device Letters.

Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress*

Y. Hao, Su Weiwei, Xiao-hua Ma, 2015 .

Investigation of trap states under Schottky contact in GaN/AlGaN/AlN/GaN high electron mobility transistors

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2014 .

Influence of the gate edge on the reverse leakage current of AlGaN/GaN HEMTs

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2015 .

Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2016 .

Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2014 .

Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor

Y. Hao, Xiao-hua Ma, Shenglei Zhao, 2013 .

Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors under reverse-bias stress

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2014 .

Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric

Yue Hao, Wei-Wei Chen, Bin Hou, 2015, IEEE Transactions on Electron Devices.

Different Gate Current Degradation Mechanisms in AlGaN/GaN High Electron Mobility Transistors

Lei Wang, X. Ma, Wei-Wei Chen, 2022, 2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP).

Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by dynamic capacitance dispersion technique

Xiaohua Ma, Yue Hao, Wei-Wei Chen, 2013 .

Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors

Y. Hao, Xiao-hua Ma, Bin Hou, 2014 .

Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress

Xiaohua Ma, Bin Hou, Yue Hao, 2014, Microelectron. Reliab..

Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values

Xiao-hua Ma, Xinyu Liu, Xinhua Wang, 2015 .