E. Nam

发表

Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment

D. Kang, J. Mun, B. Min, 2013 .

Normally-Off AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistor with Recessed Gate and p-GaN Back-Barrier

Jung-Hee Lee, J. Mun, S. Bae, 2012 .

Micromachined stress-free TSV hole for AlGaN/GaN-on-Si (1 1 1) platform-based devices

J. Mun, B. Min, S. Ko, 2013 .

Ultra-low rate dry etching conditions for fabricating normally-off field effect transistors on AlGaN/GaN heterostructures

Jong-Won Lim, S. Bae, Hyung-Seok Lee, 2017 .

Ohmic contact to AlGaN/GaN heterostructures on sapphire substrates

Jong-Won Lim, H. Ahn, E. Nam, 2015 .

Low leakage current AlGaN/GaN on Si-based Schottky barrier diode with bonding-pad electrode mesa etching

J. Mun, D. Jung, H. Jang, 2015 .

Low onset voltage of GaN on Si Schottky barrier diode using various recess depths

C. Jun, H. Cha, J. Mun, 2014 .

Normally-Off AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistor with Recessed Gate and p-GaN Back-Barrier

Jung-Hee Lee, J. Mun, S. Bae, 2012 .

Stimulated Emission with 349-nm Wavelength in GaN/AlGaN MQWs by Optical Pumping

S. Bae, Y. Ko, D. C. Kim, 2017 .

Wafer-scale crack-free AlGaN on GaN through two-step selective-area growth for optically pumped stimulated emission

Y. Leem, S. Bae, Yong‐Hoon Cho, 2016 .

Analysis of the degradation of AlGaN/GaN HEMTs by high-temperature operation tests

J. Mun, B. Min, Jong‐Min Lee, 2014 .

A Multi-Channel Etched-Mesa PBH DFB Laser Array Using an SAG Technique

Y. Leem, S. Oh, Chul-Wook Lee, 2015, IEEE Photonics Technology Letters.

Improvement of kink and beam steering characteristics of 0.98-μm GaInAs-GaInP high-power lasers utilizing channel ion implantation

D. Jang, K. Pyun, E. Nam, 2000, IEEE Photonics Technology Letters.

Simple technique for evaluating dimensional and compositional changes in selective-area-grown MQW laser diode.

Hyung‐Moo Park, Chul-Wook Lee, O. Kwon, 2014, Optics express.

Fabrication and Characteristics of an' InP Single HBT and Waveguide PD on Double Stacked Layers for an OEMMIC

Sun Eui Hong, Hong Seung Kim, Eun-Soo Nam, 2004 .

10-Gb/s 1.59- $\mu \text{m}$ DFB-LD Transmission Over 20 km SMF With No Compensation

S. Oh, Chul-Wook Lee, O. Kwon, 2016, IEEE Photonics Technology Letters.

Efficiency and Electron Leakage Characteristics in GaN-Based Light-Emitting Diodes Without AlGaN Electron-Blocking-Layer Structures

H. Ryu, Jong-Moo Lee, J. Shim, 2011, IEEE Photonics Technology Letters.

A Fully Embedded LTCC Multilayer BPF for 3-D Integration of 40-GHz Radio

Chul Soon Park, Sukhoon Kang, Yun Hee Cho, 2007, IEEE Transactions on Advanced Packaging.

Design and Evaluation of Cascode GaN FET for Switching Power Conversion Systems

Eun Soo Nam, Youngrak Park, Dong Yun Jung, 2017 .

0.34 $\text{V}_{\mathrm {T}}$ AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal

Eun Soo Nam, Youngrak Park, Jeho Na, 2015, IEEE Electron Device Letters.

1.5-μm and 10-Gb s−1 etched mesa buried heterostructure DFB-LD for datacenter networks

Y. Leem, S. Oh, Chul-Wook Lee, 2015 .