W. Lanford

发表

Recessed-gate enhancement-mode GaN HEMT with high threshold voltage

Ilesanmi Adesida, T. Tanaka, T. Tanaka, 2005 .

Plasma-induced effects on the thermal conductivity of hydride vapor phase epitaxy grown n-GaN/Sapphire (0001)

I. Adesida, R. Molnar, F. Pollak, 2000 .

Ion-beam processing effects on the thermal conductivity of n-GaN/sapphire (0001)

Fred H. Pollak, Ilesanmi Adesida, Richard J. Molnar, 2002 .

Growth of CN_xH_y films by reactive magnetron sputtering of carbon in Ar/NH_3 discharges

W. Lanford, J. Sundgren, H. Sjöström, 1996 .

AlGaN/InGaN HEMTs for RF current collapse suppression

I. Adesida, A. Kuliev, R. Schwindt, 2004 .

GaN electronics with high electron mobility transistors

I. Adesida, A. Kuliev, V. Kumar, 2004, 2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716).